SBOS558D April   2011  – April 2025 INA200-Q1 , INA201-Q1 , INA202-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: Current-Shunt Monitor
    6. 6.6 Electrical Characteristics: Comparator
    7. 6.7 Electrical Characteristics: General
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Hysteresis
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Comparator
      2. 8.3.2 Output Voltage Range
    4. 8.4 Device Functional Modes
  10. 9 Application Information
    1. 9.1 Application Information
      1. 9.1.1 Basic Connections
      2. 9.1.2 Selecting RS
      3. 9.1.3 Input Filtering
      4. 9.1.4 Accuracy Variations as a Result of VSENSE and Common-Mode Voltage
        1. 9.1.4.1 Normal Case 1: VSENSE ≥ 20 mV, VCM ≥ VS
        2. 9.1.4.2 Normal Case 2: VSENSE ≥ 20 mV, VCM < VS
        3. 9.1.4.3 Low VSENSE Case 1: VSENSE < 20 mV, –16 V ≤ VCM < 0 V; and Low VSENSE Case 3: VSENSE < 20 mV, VS < VCM ≤ 80 V
        4. 9.1.4.4 Low VSENSE Case 2: VSENSE < 20 mV, 0 V ≤ VCM ≤ VS
      5. 9.1.5 Transient Protection
    2. 9.2 Typical Applications
      1. 9.2.1 Low-Side Switch Overcurrent Shutdown
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 High-Side Switch Overcurrent Shutdown
      3. 9.2.3 Bidirectional Overcurrent Comparator
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Output vs Supply Ramp Considerations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.1.5 Transient Protection

The –16-V to +80-V common-mode range of the INA20X-Q1 is ideal for withstanding automotive fault conditions, ranging from 12-V battery reversal up to 80-V transients, because there is need for additional protective components up to those levels. In the event that the INA20x-Q1 are exposed to transients on the inputs in excess of their ratings, then external transient absorption with semiconductor transient absorbers (such as Zeners) is necessary. Do not use metal-oxide varistors (MOVs) or voltage-dependent resistors (VDRs) except when they are used in addition to a semiconductor transient absorber. Select the transient absorber such that it never allows exposure of the INA20X-Q1 to transients greater than 80 V (that is, allow for transient absorber tolerance, as well as additional voltage due to transient absorber dynamic impedance). Despite the use of internal zener-type ESD protection, the INA20x-Q1 do not lend themselves to using external resistors in series with the inputs, because the internal gain resistors can vary up to ±30%. (If gain accuracy is not important, then one can add resistors in series with the INA20x-Q1 inputs with two equal resistors on each input.)