SBOS558D April   2011  – April 2025 INA200-Q1 , INA201-Q1 , INA202-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: Current-Shunt Monitor
    6. 6.6 Electrical Characteristics: Comparator
    7. 6.7 Electrical Characteristics: General
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Hysteresis
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Comparator
      2. 8.3.2 Output Voltage Range
    4. 8.4 Device Functional Modes
  10. 9 Application Information
    1. 9.1 Application Information
      1. 9.1.1 Basic Connections
      2. 9.1.2 Selecting RS
      3. 9.1.3 Input Filtering
      4. 9.1.4 Accuracy Variations as a Result of VSENSE and Common-Mode Voltage
        1. 9.1.4.1 Normal Case 1: VSENSE ≥ 20 mV, VCM ≥ VS
        2. 9.1.4.2 Normal Case 2: VSENSE ≥ 20 mV, VCM < VS
        3. 9.1.4.3 Low VSENSE Case 1: VSENSE < 20 mV, –16 V ≤ VCM < 0 V; and Low VSENSE Case 3: VSENSE < 20 mV, VS < VCM ≤ 80 V
        4. 9.1.4.4 Low VSENSE Case 2: VSENSE < 20 mV, 0 V ≤ VCM ≤ VS
      5. 9.1.5 Transient Protection
    2. 9.2 Typical Applications
      1. 9.2.1 Low-Side Switch Overcurrent Shutdown
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 High-Side Switch Overcurrent Shutdown
      3. 9.2.3 Bidirectional Overcurrent Comparator
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Output vs Supply Ramp Considerations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2 High-Side Switch Overcurrent Shutdown

Figure 9-7 shows the basic connection for a high-side, switch overcurrent shutdown application. The high-side PMOS switch disconnects when an overcurrent event occurs. The previous Detailed Design Procedure section describes how to apply this application example. The difference is that the current is sensed on the high side of the bus in this application, and the low side of the bus in the previous application example.

INA200-Q1 INA201-Q1 INA202-Q1 High-Side Switch Overcurrent Shutdown
NOTE: Q cascodes the comparator output to drive a high-side FET (the 2N3904 shown is good up to 60 V). The shunt can be located in any one of the three locations shown. Use the latching capability in shutdown applications to prevent oscillation at the trip point.
Figure 9-7 High-Side Switch Overcurrent Shutdown