SNIS241 September   2025 TMP461-EP

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Information
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Two-Wire Timing Requirements
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Temperature Measurement Data
        1. 7.3.1.1 Decoding Temperature Data
      2. 7.3.2 Series Resistance Cancellation
      3. 7.3.3 Differential Input Capacitance
      4. 7.3.4 Filtering
      5. 7.3.5 Sensor Fault
      6. 7.3.6 ALERT and THERM Functions
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode (SD)
    5. 7.5 Programming
      1. 7.5.1 Serial Interface
        1. 7.5.1.1 Bus Overview
        2. 7.5.1.2 Bus Definitions
        3. 7.5.1.3 Serial Bus Address
        4. 7.5.1.4 Read and Write Operations
        5. 7.5.1.5 Timeout Function
        6. 7.5.1.6 High-Speed Mode
      2. 7.5.2 General-Call Reset
  9. Register Map
    1. 8.1 Register Information
      1. 8.1.1  Pointer Register
      2. 8.1.2  Local and Remote Temperature Registers
      3. 8.1.3  Status Register
      4. 8.1.4  Configuration Register
      5. 8.1.5  Conversion Rate Register
      6. 8.1.6  One-Shot Start Register
      7. 8.1.7  Channel Enable Register
      8. 8.1.8  Consecutive ALERT Register
      9. 8.1.9  η-Factor Correction Register
      10. 8.1.10 Remote Temperature Offset Register
      11. 8.1.11 Manufacturer Identification Register
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Related Documentation
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Design Requirements

The TMP461-EP device is designed to be used with either discrete transistors or substrate transistors built into processor chips and application-specific integrated circuits (ASICs). Either NPN or PNP transistors can be used, as long as the base-emitter junction is used as the remote temperature sense. NPN transistors must be diode-connected. PNP transistors can either be transistor-connected or diode-connected (see Figure 9-1). The D+ pin waveform is shown in Figure 9-3 while a transistor is connected between the D+ and D– pins. Due to three different source currents shown in Figure 7-1, the D+ waveform has three levels of voltages during temperature conversion.

TMP461-EP D+ WaveformFigure 9-3 D+ Waveform

Errors in remote temperature sensor readings are typically the consequence of the ideality factor and current excitation used by the TMP461-EP device versus the manufacturer-specified operating current for a given transistor. Some manufacturers specify a high-level and low-level current for the temperature-sensing substrate transistors. The TMP461-EP device uses 7.5μA for ILOW and 120μA for IHIGH.

The ideality factor (η) is a measured characteristic of a remote temperature sensor diode as compared to an ideal diode. The TMP461-EP allows for different η-factor values; see the η-Factor Correction Register section.

The ideality factor for the TMP461-EP device is trimmed to be 1.008. For transistors that have an ideality factor that does not match the TMP461-EP, Equation 4 can be used to calculate the temperature error.

Note:

For Equation 4 to be used correctly, the actual temperature (°C) must be converted to Kelvin (K).

Equation 4. TMP461-EP

where

  • TERR = error in the TMP461-EP device because η ≠ 1.008,
  • η = ideality factor of the remote temperature sensor,
  • T(°C) = actual temperature, and

In Equation 4, the degree of delta is the same for °C and K.

For η = 1.004 and T(°C) = 100°C:

Equation 5. TMP461-EP

If a discrete transistor is used as the remote temperature sensor with the TMP461-EP, the best accuracy can be achieved by selecting the transistor according to the following criteria:

  1. Base-emitter voltage is > 0.25V at 7.5μA, at the highest-sensed temperature.
  2. Base-emitter voltage is < 0.95V at 120μA, at the lowest-sensed temperature.
  3. Base resistance is < 100Ω.
  4. Tight control of VBE characteristics indicated by small variations in hFE (that is, 50 to 150).

Based on this criteria, two recommended small-signal transistors are the 2N3904 (NPN) or 2N3906 (PNP).