SBASB93 June   2026 ADS9308V8I

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Switching Characteristics
    8. 5.8 Timing Diagrams
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Current Sense Programmable Gain Amplifier
      2. 6.3.2 Voltage Sense Programmable Gain Amplifier (VPGA)
      3. 6.3.3 ADC Transfer Function
      4. 6.3.4 Reference
      5. 6.3.5 Digital Averaging Filter
      6. 6.3.6 Data Interface
        1. 6.3.6.1 ADC Channel Modes
    4. 6.4 Device Functional Modes
      1. 6.4.1 Reset
      2. 6.4.2 Normal Operation
      3. 6.4.3 Standby Mode
    5. 6.5 Programming
      1. 6.5.1 Register Write Operation
      2. 6.5.2 Register Read Operation
      3. 6.5.3 Initialization Sequence
    6. 6.6 Register Maps
      1. 6.6.1 ADS93x8V8I Common Registers
      2. 6.6.2 IS1 - IS8 Channel Registers
      3. 6.6.3 VS1 - VS8 Channel Registers
  8. 7 Application and Implementation
    1. 7.1 Typical Application
      1. 7.1.1 Multichannel Lithium-ion cell formation and test
    2. 7.2 Power Supply Recommendations
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
      2. 7.3.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Tape and Reel Information
    2. 10.2 Mechanical Data

7.3.1 Layout Guidelines

Figure 7-3 illustrates a board layout example for the ADS9308V8I. Avoid crossing digital lines with the analog signal path and keep the analog input signals and the reference signals away from noise sources.

For best performance, filter the internal reference noise by connecting a 4.7μF ceramic bypass capacitor to the REFIO pin, and connect 1μF ceramic capacitors directly between REFCAPA and REFM pins, and between the REFCAPB and REFM pins. Place 1μF reference decoupling capacitors close to the device REFCAP and REFM pins. Avoid placing vias between the REFIO pin and the bypass capacitors. Connect the GND and REFM pins to a ground plane using short, low-impedance paths.

Use 0.1μF ceramic bypass capacitors in close proximity to the AVDD_5V, AVDD_1V8, and IOVDD power-supply pins. Avoid placing vias between the power-supply pins and the bypass capacitors.