SBASB93 June   2026 ADS9308V8I

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Switching Characteristics
    8. 5.8 Timing Diagrams
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Current Sense Programmable Gain Amplifier
      2. 6.3.2 Voltage Sense Programmable Gain Amplifier (VPGA)
      3. 6.3.3 ADC Transfer Function
      4. 6.3.4 Reference
      5. 6.3.5 Digital Averaging Filter
      6. 6.3.6 Data Interface
        1. 6.3.6.1 ADC Channel Modes
    4. 6.4 Device Functional Modes
      1. 6.4.1 Reset
      2. 6.4.2 Normal Operation
      3. 6.4.3 Standby Mode
    5. 6.5 Programming
      1. 6.5.1 Register Write Operation
      2. 6.5.2 Register Read Operation
      3. 6.5.3 Initialization Sequence
    6. 6.6 Register Maps
      1. 6.6.1 ADS93x8V8I Common Registers
      2. 6.6.2 IS1 - IS8 Channel Registers
      3. 6.6.3 VS1 - VS8 Channel Registers
  8. 7 Application and Implementation
    1. 7.1 Typical Application
      1. 7.1.1 Multichannel Lithium-ion cell formation and test
    2. 7.2 Power Supply Recommendations
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
      2. 7.3.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Tape and Reel Information
    2. 10.2 Mechanical Data

5.1 Absolute Maximum Ratings

over operating ambient temperature range (unless otherwise noted)(1)
MIN MAX UNIT
AVDD_5V to GND –0.3 6 V
AVDD_1V8 to GND –0.3 2.1 V
IOVDD to GND –0.3 3.6 V
VSPn and VSNn to GND –50 50 V
VSPn – VSNm, between any adjacent voltage sense pin –50 50 V
ISPx and ISNx to GND –20 20 V
REFIO to GND GND – 0.3 VREF (4.096) + 0.3 V
REFM to GND GND – 0.3 GND + 0.3 V
Digital inputs to GND GND – 0.3 3.6 V
Input current to any pin except supply pins(2) –10 10 mA
Junction temperature, TJ –40 150 °C
Storage temperature, Tstg –60 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) Pin current must be limited to 10mA or less.