SBASB93 June   2026 ADS9308V8I

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Switching Characteristics
    8. 5.8 Timing Diagrams
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Current Sense Programmable Gain Amplifier
      2. 6.3.2 Voltage Sense Programmable Gain Amplifier (VPGA)
      3. 6.3.3 ADC Transfer Function
      4. 6.3.4 Reference
      5. 6.3.5 Digital Averaging Filter
      6. 6.3.6 Data Interface
        1. 6.3.6.1 ADC Channel Modes
    4. 6.4 Device Functional Modes
      1. 6.4.1 Reset
      2. 6.4.2 Normal Operation
      3. 6.4.3 Standby Mode
    5. 6.5 Programming
      1. 6.5.1 Register Write Operation
      2. 6.5.2 Register Read Operation
      3. 6.5.3 Initialization Sequence
    6. 6.6 Register Maps
      1. 6.6.1 ADS93x8V8I Common Registers
      2. 6.6.2 IS1 - IS8 Channel Registers
      3. 6.6.3 VS1 - VS8 Channel Registers
  8. 7 Application and Implementation
    1. 7.1 Typical Application
      1. 7.1.1 Multichannel Lithium-ion cell formation and test
    2. 7.2 Power Supply Recommendations
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
      2. 7.3.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Tape and Reel Information
    2. 10.2 Mechanical Data

Timing Requirements

at AVDD_5V = 4.75V to 5.25V, AVDD_1V8 = 1.7V to 1.9V, IOVDD = 1.7V to 3.6V, VREF = 4.096V (internal or external), and maximum throughput (unless otherwise noted); minimum and maximum values at TA = –40°C to +125°C; typical values at TA = 25°C
MIN MAX UNIT
CONVST
fCONVST ADC sampling frequency, free running continuous clock 100 1000 kHz
tCONVST Sampling time interval 1 / fCONVST µs
tPH_CV CONVST pulse high time 50 ns
tPL_CV CONVST pulse low time 50 ns
SERIAL INTERFACE
fSCLK Maximum SCLK frequency 80 MHz
tSCLK Minimum SCLK time period 20 ns
tPH_SCLK SCLK high time 0.45 0.55 tSCLK
tPL_SCLK SCLK low time 0.45 0.55 tSCLK
thi_CS Pulse duration: CS high 5 ns
tsu_CSCK Setup time: CS falling to the first SCLK capture edge 12 ns
tht_CSCK Hold time: last SCLK falling edge to CS rising time 10 ns
tsu_CKDI Setup time: SDI data valid to the corresponding SCLK rising edge 3 ns
tht_CKDI Hold time: SCLK rising edge to corresponding data valid on SDI 1 ns
tsu_DRDYCS Setup time: DRDY rising edge to CS falling edge 0 ns
tht_DRDYCS Hold time: DRDY rising edge to CS rising edge 0 ns