SLAA649G October   2014  – August 2021 MSP430F2001 , MSP430F2002 , MSP430F2003 , MSP430F2011 , MSP430F2012 , MSP430F2013 , MSP430F2013-EP , MSP430F2101 , MSP430F2111 , MSP430F2112 , MSP430F2121 , MSP430F2122 , MSP430F2131 , MSP430F2132 , MSP430F2232 , MSP430F2234 , MSP430F2252 , MSP430F2254 , MSP430F2272 , MSP430F2274 , MSP430F2274-EP , MSP430F233 , MSP430F2330 , MSP430F235 , MSP430F2350 , MSP430F2370 , MSP430F2410 , MSP430F2416 , MSP430F2417 , MSP430F2418 , MSP430F2419 , MSP430F247 , MSP430F2471 , MSP430F248 , MSP430F2481 , MSP430F249 , MSP430F249-EP , MSP430F2491 , MSP430F2616 , MSP430F2617 , MSP430F2618 , MSP430F2619 , MSP430F2619S-HT , MSP430FR2032 , MSP430FR2033 , MSP430FR2110 , MSP430FR2111 , MSP430FR2153 , MSP430FR2155 , MSP430FR2310 , MSP430FR2311 , MSP430FR2353 , MSP430FR2355 , MSP430FR2433 , MSP430FR2475 , MSP430FR2476 , MSP430FR2532 , MSP430FR2533 , MSP430FR2632 , MSP430FR2633 , MSP430FR2672 , MSP430FR2673 , MSP430FR2675 , MSP430FR2676 , MSP430FR4131 , MSP430FR4132 , MSP430FR4133 , MSP430G2001 , MSP430G2101 , MSP430G2102 , MSP430G2111 , MSP430G2112 , MSP430G2121 , MSP430G2131 , MSP430G2132 , MSP430G2152 , MSP430G2153 , MSP430G2201 , MSP430G2202 , MSP430G2203 , MSP430G2210 , MSP430G2211 , MSP430G2212 , MSP430G2213 , MSP430G2221 , MSP430G2230 , MSP430G2230-EP , MSP430G2231 , MSP430G2231-EP , MSP430G2232 , MSP430G2233 , MSP430G2252 , MSP430G2253 , MSP430G2302 , MSP430G2302-EP , MSP430G2303 , MSP430G2312 , MSP430G2313 , MSP430G2332 , MSP430G2332-EP , MSP430G2333 , MSP430G2352 , MSP430G2353 , MSP430G2402 , MSP430G2403 , MSP430G2412 , MSP430G2413 , MSP430G2432 , MSP430G2433 , MSP430G2444 , MSP430G2452 , MSP430G2453 , MSP430G2513 , MSP430G2533 , MSP430G2544 , MSP430G2553 , MSP430G2744 , MSP430G2755 , MSP430G2855 , MSP430G2955 , MSP430I2020 , MSP430I2021 , MSP430I2030 , MSP430I2031 , MSP430I2040 , MSP430I2041

 

  1.   Trademarks
  2. 1 Introduction
  3. 2 Comparison of MSP430FR4xx and MSP430FR2xx Devices
  4. 3 In-System Programming of Nonvolatile Memory
    1. 3.1 Ferroelectric RAM (FRAM) Overview
    2. 3.2 FRAM Cell
    3. 3.3 Protecting FRAM Using the Memory Write Protection Bit
    4. 3.4 FRAM Memory Wait States
    5. 3.5 Bootloader (BSL)
    6. 3.6 JTAG and Security
    7. 3.7 Production Programming
  5. 4 Hardware Migration Considerations
  6. 5 Device Calibration Information
  7. 6 Important Device Specifications
  8. 7 Core Architecture Considerations
    1. 7.1 Power Management Module (PMM)
      1. 7.1.1 Core LDO and LPM3.5 LDO
      2. 7.1.2 SVS
      3. 7.1.3 VREF
      4. 7.1.4 Debug in Low-Power Mode
    2. 7.2 Clock System
      1. 7.2.1 DCO Frequencies
      2. 7.2.2 FLL, REFO, and DCO Tap
      3. 7.2.3 FRAM Access at 16 MHz, ADC Clock, and Clocks-on-Demand
    3. 7.3 Operating Modes, Wake-up Times, and Reset
      1. 7.3.1 LPMx.5
      2. 7.3.2 Reset
        1. 7.3.2.1 Behavior of POR and BOR
        2. 7.3.2.2 Reset Generation
        3. 7.3.2.3 Determining the Cause of Reset
    4. 7.4 Interrupt Vectors
    5. 7.5 FRAM and the FRAM Controller
      1. 7.5.1 Flash and FRAM Overview Comparison
      2. 7.5.2 Cache Architecture
  9. 8 Peripheral Considerations
    1. 8.1  Watchdog Timer
    2. 8.2  Ports
      1. 8.2.1 Digital Input/Output
      2. 8.2.2 Capacitive Touch I/O
    3. 8.3  Analog-to-Digital Converters
      1. 8.3.1 ADC10 to ADC
    4. 8.4  Communication Modules
      1. 8.4.1 USI to eUSCI
      2. 8.4.2 USCI to eUSCI
    5. 8.5  Timer and IR Modulation Logic
    6. 8.6  Backup Memory
    7. 8.7  Hardware Multiplier (MPY32)
    8. 8.8  RTC Counter
    9. 8.9  Interrupt Compare Controller (ICC)
    10. 8.10 LCD
    11. 8.11 Smart Analog Combo (SAC)
    12. 8.12 Comparator
  10. 9 ROM Libraries
  11. 10Conclusion
  12. 11References
  13. 12Revision History

3.2 FRAM Cell

A single FRAM cell can be considered a dipole capacitor that consists of a film of ferroelectric material (ferroelectric crystal) between two electrode plates. Storing a 1 or 0 (writing to FRAM) simply requires polarizing the crystal in a specific direction using an electric field. This makes FRAM very fast, easy to write to, and capable of meeting high-endurance requirements.

Reading from FRAM requires applying an electric field across the capacitor similar to a write. Depending on the state of the crystal, it may be repolarized, thereby emitting a large induced charge. This charge is then compared to a known reference to estimate the state of the crystal. The stored data bit 1 or 0 is inferred from the induced charge. In the process of reading the data, the crystal that is polarized in the direction of the applied field loses its current state. Hence, every read must be accompanied by a write-back to restore the state of the memory location. With TI's MSP430 FRAM MCUs, this is inherent to the FRAM implementation and is completely transparent to the application. The write-back mechanism is also protected from power loss and completes safely under all power-fail events.

The FR4xx power management system achieves this by isolating the FRAM power rails from the device supply rails in the event of a power loss. The FRAM power circuitry also uses built-in low-dropout regulator (LDO) and a capacitor that stores sufficient charge to complete the current write-back in the event of a power failure.

See Section 7.5 for more information about FRAM and the FRAM controller.