SLLSFW3A April   2025  – June 2025 SN55LVTA4-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Unused Enable Pins
      2. 7.3.2 Driver Disabled Output
      3. 7.3.3 Driver Equivalent Schematics
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Typical Application
        1. 8.1.1.1 Detailed Design Procedure
          1. 8.1.1.1.1 Interconnecting Media
        2. 8.1.1.2 Design Requirements
        3. 8.1.1.3 Application Curve
      2. 8.1.2 Cold Sparing
      3. 8.1.3 Power Supply Recommendations
        1. 8.1.3.1 Supply Bypass Capacitance
      4. 8.1.4 Layout
        1. 8.1.4.1 Layout Guidelines
          1. 8.1.4.1.1 Microstrip vs. Stripline Topologies
          2. 8.1.4.1.2 Dielectric Type and Board Construction
          3. 8.1.4.1.3 Recommended Stack Layout
          4. 8.1.4.1.4 Separation Between Traces
          5. 8.1.4.1.5 Crosstalk and Ground Bounce Minimization
        2. 8.1.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Related Documentation
  11. 10Receiving Notification of Documentation Updates
  12. 11Support Resources
  13. 12Trademarks
  14. 13Electrostatic Discharge Caution
  15. 14Glossary
  16. 15Revision History
  17. 16Mechanical, Packaging, and Orderable Information

1 Features

  • VID V62/25605-01XE
  • Total ionizing dose characterized at 30krad (Si)
    • Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30krad (Si)
  • Single-event effects (SEE) characterized:
    • Single event latch-up (SEL) immune to linear energy transfer (LET) = 50MeV-cm2 /mg
    • Single event transient (SET) characterized to 50MeV-cm2/mg.
  • Meet or exceed the requirements of ANSI TIA/EIA-644 standard
  • Low-voltage differential signaling with typical output voltage of 350mV and 100Ω load
  • Typical output voltage rise and fall times of 500ps (400Mbps)
  • Typical propagation delay times of 1.7ns
  • Operate from a single 3.3V supply
  • Power dissipation 25mW typical per driver at 200MHz
  • Driver at high impedance when disabled or with VCC = 0
  • Bus-terminal ESD protection exceeds 8kV
  • Low-voltage TTL (LVTTL) logic input levels
  • Cold sparing for space and high reliability applications requiring redundancy
  • Space enhanced plastic (SEP)
    • Controlled baseline
    • Gold wire, NiPdAu lead finish
    • One assembly and test site, one fabrication site
    • Extended product life cycle
    • Military (–55°C to 125°C) temperature range
    • Product traceability
    • Meets NASA ASTM E595 outgassing specification