SLUAAY2 December   2024 ISO5451 , ISO5451-Q1 , ISO5452 , ISO5452-Q1 , ISO5851 , ISO5851-Q1 , ISO5852S , ISO5852S-EP , ISO5852S-Q1 , UCC21710 , UCC21710-Q1 , UCC21717-Q1 , UCC21732 , UCC21732-Q1 , UCC21736-Q1 , UCC21737-Q1 , UCC21738-Q1 , UCC21739-Q1 , UCC21750 , UCC21750-Q1 , UCC21755-Q1 , UCC21756-Q1 , UCC21759-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. Introduction
  5. SiC and IGBT Characteristics
  6. Failure Modes
  7. Short-Circuit Protection Approaches
    1. 4.1 Short-Circuit Current-Based Protection Implementation
    2. 4.2 Short Circuit Voltage-Based Protection Implementation
  8. DESAT Circuitry Design
    1. 5.1 DESAT Circuit Component Selection
    2. 5.2 Effect of Parasitic Elements
    3. 5.3 Effect of Rlim on DESAT Noise
  9. Safe Shutdown
    1. 6.1 Safe Shutdown Mechanisms
    2. 6.2 Safe Shutdown Considerations
  10. Short-Circuit Test Setup and Data
    1. 7.1 Short-Circuit Bench Measurement Setup
    2. 7.2 SC Board Setup for Data Collection
    3. 7.3 Different Circuit Configurations for SC Testing
    4. 7.4 Bench Measurement Results
    5. 7.5 Overall Summary of SiC vs IGBT Power Module SC Observation
  11. Key Consideration in Designing SC Protection Circuit
  12. Summary
  13. 10References

Key Consideration in Designing SC Protection Circuit

  • Reduce peak short circuit current
    • Peak current depends on multiple factors: time to detect the SC event, module type, and the system voltage. As the module type and system voltage are fixed, the only way to optimize is to implement a faster detection circuit to identify the failure event faster.

Some of the key considerations to detect the failure faster:

  • Optimum smaller blanking capacitor ~30-100pF (balance between false triggering to right protection)
  • Higher blanking cap charge current (0.5mA-2mA)
  • Optimum low VSC detection threshold based on the power module
  • Reduce shutdown time and energy
    • Reducing shutdown energy depends on the peak current during the SC event and turn-off di/dt. Reducing peak current was explained in the previous passage and the only other parameter to tweak is turn-off di/dt. Though faster turn-off will help to reduce the shutdown time, it is not recommended due to possible overshoot across the power module due to very high di/dt during the SC event. So it is ideal to balance the turn-off di/dt and overshoot specific to the power module.
      • Faster turn-off (higher overshoot, but less shutdown energy), slower turn-off (lower overshoot, but higher shutdown energy)
      • Need to balance between overshoot vs shutdown energy
Table 8-1 TI Isolated Gate Drivers Selection for SiC and IGBT Power Module Protection
IGBT SiC
Smart Isolated Gate Driver UCC217xx family (ICHG = 0.5mA)
Desaturation protection (9V threshold)
UCC21750 (STO-400mA)
(5V threshold)
UCC21755 (STO-400mA)
UCC21756 (STO-900mA)
OC protection (0.7V threshold) UCC21710, UCC21737 (STO- 400mA)
(0.7V threshold) UCC21732 (2LTO – 900mA)
Programmable Isolated Gate Driver – UCC588x (ICHG=0.5-2mA)
Desaturation protection 4-14V threshold
OC/SC protection 0.25V – 2V threshold
STO /2STO current 300mA -1200mA