SNAS512 Data sheet

SNAS512K September 2011 – October 2025 LMK00301

PRODUCTION DATA

6.5 Electrical Characteristics

Unless otherwise specified: Vcc = 3.3V ± 5%, Vcco = 3.3V ± 5%, 2.5V ± 5%, -40°C ≤ T_A ≤ 85°C, CLKin driven differentially, input slew rate ≥ 3V/ns. Typical values represent most likely parametric norms at Vcc = 3.3V, Vcco = 3.3V, T_A = 25°C, and at the Recommended Operation Conditions at the time of product characterization and are not ensured.⁽¹⁾

	PARAMETER	TEST CONDITIONS		MIN	TYP	MAX	UNIT
CURRENT CONSUMPTION⁽²⁾
I_{CC_CORE}	Core Supply Current, All Outputs Disabled	CLKinX selected			8.5	10.5	mA
I_{CC_CORE}	Core Supply Current, All Outputs Disabled	OSCin selected			10	13.5	mA
I_{CC_PECL}	Additive Core Supply Current, Per LVPECL Bank Enabled				20	27	mA
I_{CC_LVDS}	Additive Core Supply Current, Per LVDS Bank Enabled	LMK00301			26	32.5	mA
I_{CC_LVDS}	Additive Core Supply Current, Per LVDS Bank Enabled	LMK00301A			31	38	mA
I_{CC_HCSL}	Additive Core Supply Current, Per HCSL Bank Enabled				35	42	mA
I_{CC_CMOS}	Additive Core Supply Current, LVCMOS Output Enabled				3.5	5.5	mA
I_{CCO_PECL}	Additive Output Supply Current, Per LVPECL Bank Enabled	Includes Output Bank Bias and Load Currents, R_T = 50Ω to Vcco - 2V on all outputs in bank			165	197	mA
I_{CCO_LVDS}	Additive Output Supply Current, Per LVDS Bank Enabled	LMK00301			34	44.5	mA
I_{CCO_LVDS}	Additive Output Supply Current, Per LVDS Bank Enabled	LMK00301A			24	33.5	mA
I_{CCO_HCSL}	Additive Output Supply Current, Per HCSL Bank Enabled	Includes Output Bank Bias and Load Currents, R_T = 50Ω on all outputs in bank	Vcco = 3.3V ± 5%		87	104	mA
I_{CCO_HCSL}	Additive Output Supply Current, Per HCSL Bank Enabled		Vcco = 2.5V ± 5%		87	104	mA
I_{CCO_CMOS}	Additive Output Supply Current, LVCMOS Output Enabled	200MHz, C_L = 5pF	Vcco = 3.3V ± 5%		9	10	mA
I_{CCO_CMOS}	Additive Output Supply Current, LVCMOS Output Enabled	200MHz, C_L = 5pF	Vcco = 2.5V ± 5%		7	8	mA
POWER SUPPLY RIPPLE REJECTION (PSRR)
PSRR_PECL	Ripple-Induced Phase Spur Level⁽³⁾ Differential LVPECL Output	100kHz, 100mVpp Ripple Injected on Vcco, Vcco = 2.5V	156.25MHz		-65		dBc
PSRR_PECL			312.5MHz		-63		dBc
PSRR_HCSL	Ripple-Induced Phase Spur Level⁽³⁾ Differential HCSL Output		156.25MHz		-76		dBc
PSRR_HCSL	Ripple-Induced Phase Spur Level⁽³⁾ Differential HCSL Output		312.5MHz		-74		dBc
PSRR_LVDS	Ripple-Induced Phase Spur Level⁽³⁾ Differential LVDS Output		156.25MHz		-72		dBc
PSRR_LVDS	Ripple-Induced Phase Spur Level⁽³⁾ Differential LVDS Output		312.5MHz		-63		dBc
CMOS CONTROL INPUTS (CLKin_SELn, CLKoutX_TYPEn, REFout_EN)
V_IH	High-Level Input Voltage			1.6		Vcc	V
V_IL	Low-Level Input Voltage			GND		0.4	V
I_IH	High-Level Input Current	V_IH = Vcc, Internal pull-down resistor				50	µA
I_IL	Low-Level Input Current	V_IL = 0V, Internal pull-down resistor		-5	0.1		µA
CLOCK INPUTS (CLKin0/CLKin0, CLKin1/CLKin1)
f_CLKin	Input Frequency Range⁽¹⁰⁾	Functional up to 3.1GHz Output frequency range and timing specified per output type (refer to LVPECL, LVDS, HCSL, LVCMOS output specifications)		DC		3.1	GHz
V_IHD	Differential Input High Voltage	CLKin driven differentially				Vcc	V
V_ILD	Differential Input Low Voltage			GND			V
V_ID	Differential Input Voltage Swing⁽⁴⁾			0.15		1.3	V
V_CMD	Differential Input Common Mode Voltage	V_ID = 150mV		0.25		Vcc - 1.2	V
		V_ID = 350mV		0.25		Vcc - 1.1
		V_ID = 800mV		0.25		Vcc - 0.9
V_IH	Single-Ended Input High Voltage	CLKinX driven single-ended (AC or DC coupled), CLKinX* AC coupled to GND or externally biased within V_CM range				Vcc	V
V_IL	Single-Ended Input Low Voltage			GND			V
V_{I_SE}	Single-Ended Input Voltage Swing⁽¹⁵⁾⁽¹⁷⁾			0.3		2	Vpp
V_CM	Single-Ended Input Common Mode Voltage			0.25		Vcc - 1.2	V
ISO_MUX	Mux Isolation, CLKin0 to CLKin1	f_OFFSET > 50kHz, P_CLKinX = 0dBm	f_CLKin0 = 100MHz		-84		dBc
			f_CLKin0 = 200MHz		-82
			f_CLKin0 = 500MHz		-71
			f_CLKin0 = 1000MHz		-65
CRYSTAL INTERFACE (OSCin, OSCout)
F_CLK	External Clock Frequency Range⁽¹⁰⁾	OSCin driven single-ended, OSCout floating				250	MHz
F_XTAL	Crystal Frequency Range	Fundamental mode crystal ESR ≤ 200Ω (10 to 30MHz) ESR ≤ 125Ω (30 to 40MHz)⁽⁵⁾		10		40	MHz
C_IN	OSCin Input Capacitance				4		pF
*LVPECL OUTPUTS (CLKoutAn/CLKoutAn, CLKoutBn/CLKoutBn)*
f_{CLKout_FS}	Maximum Output Frequency Full V_OD Swing⁽¹⁰⁾⁽¹¹⁾	V_OD ≥ 600mV, R_L = 100Ω differential	Vcco = 3.3V ± 5%, R_T = 160Ω to GND	1.0	1.2		GHz
f_{CLKout_FS}	Maximum Output Frequency Full V_OD Swing⁽¹⁰⁾⁽¹¹⁾	V_OD ≥ 600mV, R_L = 100Ω differential	Vcco = 2.5V ± 5%, R_T = 91Ω to GND	0.75	1.0		GHz
f_{CLKout_RS}	Maximum Output Frequency Reduced V_OD Swing⁽¹⁰⁾⁽¹¹⁾	V_OD ≥ 400mV, R_L = 100Ω differential	Vcco = 3.3V ± 5%, R_T = 160Ω to GND	1.5	3.1		GHz
f_{CLKout_RS}	Maximum Output Frequency Reduced V_OD Swing⁽¹⁰⁾⁽¹¹⁾	V_OD ≥ 400mV, R_L = 100Ω differential	Vcco = 2.5V ± 5%, R_T = 91Ω to GND	1.5	2.3		GHz
Jitter_ADD	Additive RMS Jitter, Integration Bandwidth 10kHz to 20MHz⁽¹⁵⁾⁽⁶⁾⁽¹⁶⁾	Vcco = 2.5V ± 5%: R_T = 91Ω to GND, Vcco = 3.3V ± 5%: R_T = 160Ω to GND, R_L = 100Ω differential	CLKin: 100MHz, Slew rate ≥ 3V/ns		77	98	fs
Jitter_ADD			CLKin: 156.25MHz, Slew rate ≥ 3V/ns		54	78	fs
Jitter_ADD	Additive RMS Jitter Integration Bandwidth 1MHz to 20MHz⁽⁶⁾	Vcco = 3.3V, R_T = 160Ω to GND, R_L = 100Ω differential	CLKin: 100MHz, Slew rate ≥ 3V/ns		59		fs
			CLKin: 156.25MHz, Slew rate ≥ 2.7V/ns		64
			CLKin: 625MHz, Slew rate ≥ 3V/ns		30
Jitter_ADD	Additive RMS Jitter with LVPECL clock source from LMK03806⁽⁶⁾⁽⁷⁾	Vcco = 3.3V, R_T = 160Ω to GND, R_L = 100Ω differential	CLKin: 156.25MHz, J_SOURCE = 190 fs RMS (10kHz to 1MHz)		20		fs
Jitter_ADD		Vcco = 3.3V, R_T = 160Ω to GND, R_L = 100Ω differential	CLKin: 156.25MHz, J_SOURCE = 195 fs RMS (12kHz to 20MHz)		51		fs
Noise Floor	Noise Floor f_OFFSET ≥ 10MHz⁽⁸⁾⁽⁹⁾	Vcco = 3.3V, R_T = 160Ω to GND, R_L = 100Ω differential	CLKin: 100MHz, Slew rate ≥ 3V/ns		-162.5		dBc/Hz
			CLKin: 156.25MHz, Slew rate ≥ 2.7V/ns		-158.1
			CLKin: 625MHz, Slew rate ≥ 3V/ns		-154.4
DUTY	Duty Cycle⁽¹⁰⁾	50% input clock duty cycle		45%		55%
V_OH	Output High Voltage	T_A = 25°C, DC Measurement, R_T = 50Ω to Vcco - 2V		Vcco - 1.2	Vcco - 0.9	Vcco - 0.7	V
V_OL	Output Low Voltage			Vcco - 2.0	Vcco - 1.75	Vcco - 1.5	V
V_OD	Output Voltage Swing⁽⁴⁾			600	830	1000	mV
t_R	Output Rise Time 20% to 80%⁽¹⁵⁾	R_T = 160Ω to GND, Uniform transmission line up to 10 in. with 50Ω characteristic impedance, R_L = 100Ω differential, C_L ≤ 5pF			175	300	ps
t_F	Output Fall Time 80% to 20%⁽¹⁵⁾				175	300	ps
*LVDS OUTPUTS (CLKoutAn/CLKoutAn, CLKoutBn/CLKoutBn)*
f_{CLKout_FS}	Maximum Output Frequency Full V_OD Swing⁽¹⁰⁾⁽¹¹⁾	V_OD ≥ 250mV, R_L = 100Ω differential		1.0	1.6		GHz
f_{CLKout_RS}	Maximum Output Frequency Reduced V_OD Swing⁽¹⁰⁾⁽¹¹⁾	V_OD ≥ 200mV, R_L = 100Ω differential		1.5	2.1		GHz
Jitter_ADD	Additive RMS Jitter, Integration Bandwidth 10kHz to 20MHz⁽¹⁵⁾⁽⁶⁾⁽¹⁶⁾	R_L = 100Ω differential	CLKin: 100MHz, Slew rate ≥ 3V/ns		94	115	fs
Jitter_ADD		R_L = 100Ω differential	CLKin: 156.25MHz, Slew rate ≥ 3V/ns		70	90	fs
Jitter_ADD	Additive RMS Jitter Integration Bandwidth 1MHz to 20MHz⁽⁶⁾	Vcco = 3.3V, R_L = 100Ω differential	CLKin: 100MHz, Slew rate ≥ 3V/ns		89		fs
			CLKin: 156.25MHz, Slew rate ≥ 2.7V/ns		77
			CLKin: 625MHz, Slew rate ≥ 3V/ns		37
Noise Floor	Noise Floor f_OFFSET ≥ 10MHz⁽⁸⁾⁽⁹⁾	Vcco = 3.3V, R_L = 100Ω differential	CLKin: 100MHz, Slew rate ≥ 3V/ns		-159.5		dBc/Hz
			CLKin: 156.25MHz, Slew rate ≥ 2.7V/ns		-157.0
			CLKin: 625MHz, Slew rate ≥ 3V/ns		-152.7
DUTY	Duty Cycle⁽¹⁰⁾	50% input clock duty cycle		45%		55%
V_OD	Output Voltage Swing⁽⁴⁾	T_A = 25°C, DC Measurement, R_L = 100Ω differential		250	400	450	mV
ΔV_OD	Change in Magnitude of V_OD for Complementary Output States			-50		50	mV
V_OS	Output Offset Voltage			1.125	1.25	1.375	V
ΔV_OS	Change in Magnitude of V_OS for Complementary Output States			-35		35	mV
I_SA I_SB	Output Short Circuit Current Single Ended	T_A = 25°C, Single ended outputs shorted to GND		-24		24	mA
I_SAB	Output Short Circuit Current Differential	Complementary outputs tied together		-12		12	mA
t_R	Output Rise Time 20% to 80%⁽¹⁵⁾	Uniform transmission line up to 10 inches with 50Ω characteristic impedance, R_L = 100Ω differential, C_L ≤ 5pF			175	300	ps
t_F	Output Fall Time 80% to 20%⁽¹⁵⁾				175	300	ps
*HCSL OUTPUTS (CLKoutAn/CLKoutAn, CLKoutBn/CLKoutBn)*
f_CLKout	Output Frequency Range⁽¹⁰⁾	R_L = 50Ω to GND, C_L ≤ 5pF		DC		800	MHz
Jitter_{ADD_PCIe}	Additive RMS Phase Jitter for PCIe 7.0⁴	PLL BW: 0.5 - 1MHz; CDR = 10MHz		2.79	6.28	10.1	fs
	Additive RMS Phase Jitter for PCIe 6.0⁴	PLL BW: 0.5 - 1MHz; CDR = 10MHz	CLKin: 100MHz, Slew rate ≥ 2V/ns	4.00	8.99	14.3
	Additive RMS Phase Jitter for PCIe 5.0⁴		PCIe5.0 filter	3.64	12.9	23.6
	Additive RMS Phase Jitter for PCIe 3.0⁽¹⁰⁾	PCIe Gen 3, PLL BW = 2–5MHz, CDR = 10MHz	CLKin: 100MHz, Slew rate ≥ 0.6V/ns	15.9	36.2	56.3
	Additive RMS Phase Jitter for PCIe 4.0⁽⁴⁾	PCIe Gen 4, PLL BW = 2–5MHz, CDR = 10MHz	CLKin: 100MHz, Slew rate ≥ 1.8V/ns	15.9	36.2	56.3
Jitter_ADD	Additive RMS Jitter Integration Bandwidth 1MHz to 20MHz⁽⁶⁾	Vcco = 3.3V, R_T = 50Ω to GND	CLKin: 100MHz, Slew rate ≥ 3V/ns		77		fs
Jitter_ADD	Additive RMS Jitter Integration Bandwidth 1MHz to 20MHz⁽⁶⁾	Vcco = 3.3V, R_T = 50Ω to GND	CLKin: 156.25MHz, Slew rate ≥ 2.7V/ns		86		fs
Noise Floor	Noise Floor f_OFFSET ≥ 10MHz⁽⁸⁾⁽⁹⁾	Vcco = 3.3V, R_T = 50Ω to GND	CLKin: 100MHz, Slew rate ≥ 3V/ns		-161.3		dBc/Hz
Noise Floor	Noise Floor f_OFFSET ≥ 10MHz⁽⁸⁾⁽⁹⁾	Vcco = 3.3V, R_T = 50Ω to GND	CLKin: 156.25MHz, Slew rate ≥ 2.7V/ns		-156.3		dBc/Hz
DUTY	Duty Cycle⁽¹⁰⁾	50% input clock duty cycle	CLKin ≤ 400MHz	45%		55%
V_OH	Output High Voltage	T_A = 25°C, DC Measurement,		520	810	920	mV
V_OL	Output Low Voltage	T_A = 25°C, DC Measurement,		-150	0.5	150	mV
V_CROSS	Absolute Crossing Voltage ⁽¹⁰⁾⁽¹²⁾	R_L = 50Ω to GND, C_L ≤ 5pF	CLKin ≤ 400MHz	160	350	460	mV
ΔV_CROSS	Total Variation of V_CROSS ⁽¹⁰⁾⁽¹²⁾	R_L = 50Ω to GND, C_L ≤ 5pF	CLKin ≤ 400MHz			140	mV
t_R	Output Rise Time 20% to 80%⁽¹⁵⁾⁽¹²⁾	250MHz, Uniform transmission line up to 10 inches with 50Ω characteristic impedance, R_L = 50Ω to GND, C_L ≤ 5pF			300	500	ps
t_F	Output Fall Time 80% to 20%⁽¹⁵⁾⁽¹²⁾				300	500	ps
LVCMOS OUTPUT (REFout)
f_CLKout	Output Frequency Range⁽¹⁰⁾	C_L ≤ 5pF		DC		250	MHz
Jitter_ADD	Additive RMS Jitter Integration Bandwidth 1MHz to 20MHz⁽⁶⁾	Vcco = 3.3V, C_L ≤ 5pF	100MHz, Input Slew rate ≥ 3V/ns		95		fs
Noise Floor	Noise Floor f_OFFSET ≥ 10MHz⁽⁸⁾⁽⁹⁾	Vcco = 3.3V, C_L ≤ 5pF	100MHz, Input Slew rate ≥ 3V/ns		-159.3		dBc/Hz
DUTY	Duty Cycle⁽¹⁰⁾	50% input clock duty cycle		45%		55%
V_OH	Output High Voltage	1mA load		Vcco - 0.1			V
V_OL	Output Low Voltage	1mA load				0.1	V
I_OH	Output High Current (Source)	Vo = Vcco / 2	Vcco = 3.3V		28		mA
I_OH	Output High Current (Source)		Vcco = 2.5V		20		mA
I_OL	Output Low Current (Sink)		Vcco = 3.3V		28		mA
I_OL	Output Low Current (Sink)		Vcco = 2.5V		20		mA
t_R	Output Rise Time 20% to 80%⁽¹⁵⁾⁽¹²⁾	250MHz, Uniform transmission line up to 10 inches with 50Ω characteristic impedance, R_L = 50Ω to GND, C_L ≤ 5pF			225	400	ps
t_F	Output Fall Time 80% to 20%⁽¹⁵⁾⁽¹²⁾				225	400	ps
t_EN	Output Enable Time⁽¹³⁾	C_L ≤ 5pF				3	cycles
t_DIS	Output Disable Time⁽¹³⁾	C_L ≤ 5pF				3	cycles
PROPAGATION DELAY and OUTPUT SKEW
t_{PD_PECL}	Propagation Delay CLKin-to-LVPECL⁽¹⁵⁾	R_T = 160Ω to GND, R_L = 100Ω differential, C_L ≤ 5pF		180	360	540	ps
t_{PD_LVDS}	Propagation Delay CLKin-to-LVDS⁽¹⁵⁾	R_L = 100Ω differential, C_L ≤ 5pF		200	400	600	ps
t_{PD_HCSL}	Propagation Delay CLKin-to-HCSL⁽¹⁵⁾⁽¹²⁾	R_T = 50Ω to GND, C_L ≤ 5pF		295	590	885	ps
t_{PD_CMOS}	Propagation Delay CLKin-to-LVCMOS⁽¹⁵⁾⁽¹²⁾	C_L ≤ 5pF	Vcco = 3.3V	900	1475	2300	ps
t_{PD_CMOS}	Propagation Delay CLKin-to-LVCMOS⁽¹⁵⁾⁽¹²⁾	C_L ≤ 5pF	Vcco = 2.5V	1000	1550	2700	ps
t_SK(O)	Output Skew LVPECL/LVDS/HCSL ⁽¹⁰⁾⁽¹²⁾⁽¹⁴⁾	Skew specified between any two CLKouts with the same buffer type. Load conditions per output type are the same as propagation delay specifications.			30	50	ps
t_SK(PP)	Part-to-Part Output Skew LVPECL/LVDS/HCSL ⁽¹⁵⁾⁽¹²⁾⁽¹⁴⁾				80	120	ps

(1) The Electrical Characteristics tables list verified specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions or Notes. Typical specifications are estimations only and are not ensured.

(2) See Power Supply Recommendations for more information on current consumption and power dissipation calculations. Characteristics for both LMK00301 and LMK00301A are the same unless specified under the test conditions.

(3) Power supply ripple rejection, or PSRR, is defined as the single-sideband phase spur level (in dBc) modulated onto the clock output when a single-tone sinusoidal signal (ripple) is injected onto the Vcco supply. Assuming no amplitude modulation effects and small index modulation, the peak-to-peak deterministic jitter (DJ) can be calculated using the measured single-sideband phase spur level (PSRR) as follows: DJ (ps pk-pk) = [ (2 × 10^{(PSRR / 20)}) / (π × f_CLK) ] × 1E12

(4) See Differential Voltage Measurement Terminology for definition of V_ID and V_OD voltages.

(5) The ESR requirements stated must be met to verify that the oscillator circuitry has no startup issues. However, lower ESR values for the crystal can be necessary to stay below the maximum power dissipation (drive level) specification of the crystal. Refer to Crystal Interface for crystal drive level considerations.

(6) For the 100MHz and 156.25MHz clock input conditions, Additive RMS Jitter (J_ADD) is calculated using Method #1: J_ADD = SQRT(J_OUT² - J_SOURCE²), where J_OUT is the total RMS jitter measured at the output driver and J_SOURCE is the RMS jitter of the clock source applied to CLKin. For the 625MHz clock input condition, Additive RMS Jitter is approximated using Method #2: J_ADD = SQRT(2×10^dBc/10) / (2×π×f_CLK), where dBc is the phase noise power of the Output Noise Floor integrated from 1 to 20MHz bandwidth. The phase noise power can be calculated as: dBc = Noise Floor + 10×log₁₀(20MHz - 1MHz). The additive RMS jitter was approximated for 625MHz using Method #2 because the RMS jitter of the clock source was not sufficiently low enough to allow practical use of Method #1. Refer to the “Noise Floor vs. CLKin Slew Rate” and “RMS Jitter vs. CLKin Slew Rate” plots in Typical Characteristics.

(7) 156.25MHz LVPECL clock source from LMK03806 with 20MHz crystal reference (crystal part number: ECS-200-20-30BU-DU). Typical J_SOURCE = 190 fs RMS (10kHz to 1MHz) and 195 fs RMS (12kHz to 20MHz). Refer to the LMK03806 data sheet for more information.

(8) The noise floor of the output buffer is measured as the far-out phase noise of the buffer. Typically this offset is ≥ 10MHz, but for lower frequencies this measurement offset can be as low as 5MHz due to measurement equipment limitations.

(9) Phase noise floor degrades as the clock input slew rate is reduced. Compared to a single-ended clock, a differential clock input (LVPECL, LVDS) is less susceptible to degradation in noise floor at lower slew rates due to the common mode noise rejection. Use the highest possible input slew rate for differential clocks to achieve optimal noise floor performance at the device outputs.

(10) Specification is verified by characterization and is not tested in production.

(11) See Typical Characteristics for output operation over frequency.

(12) AC timing parameters for HCSL or CMOS are dependent on output capacitive loading.

(13) Output Enable Time is the number of input clock cycles required for the output to be enabled after REFout_EN is pulled high. Similarly, Output Disable Time is the number of input clock cycles required for the output to be disabled after REFout_EN is pulled low. The REFout_EN signal must have an edge transition much faster than that of the input clock period for accurate measurement.

(14) Output skew is the propagation delay difference between any two outputs with identical output buffer type and equal loading while operating at the same supply voltage and temperature conditions.

(15) Parameter is specified by design, not tested in production.

(16) 100MHz and 156.25MHz input source from Rohde & Schwarz SMA100A Low-Noise Signal Generator and Sine-to-Square-wave Conversion block

(17) For clock input frequency ≥ 100MHz, CLKinX can be driven with single-ended (LVCMOS) input swing up to 3.3Vpp. For clock input frequency < 100MHz, the single-ended input swing must be limited to 2Vpp maximum to prevent input saturation (refer to Driving the Clock Inputs for interfacing 2.5V/3.3V LVCMOS clock input < 100MHz to CLKinX).