SPRADE8B November   2023  – August 2025 F29H850TU , F29H859TU-Q1 , TMS320F28P650DH , TMS320F28P650DK , TMS320F28P650SH , TMS320F28P650SK , TMS320F28P659DH-Q1 , TMS320F28P659DK-Q1 , TMS320F28P659SH-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Difference Between EEPROM and On-Chip Flash
  6. 3 Overview
    1. 3.1 Basic Concept
    2. 3.2 Single-Unit Method
    3. 3.3 Ping-Pong Method
    4. 3.4 Creating EEPROM Sections (Pages) and Page Identification
  7. 4 Software Description
  8. 5 Ping-Pong Emulation
    1. 5.1 User-Configuration
      1. 5.1.1 EEPROM_PingPong_Config.h
      2. 5.1.2 F28P65x_EEPROM_PingPong.c
    2. 5.2 Testing Example
  9. 6 EEPROM Functions
    1. 6.1  EEPROM_Config_Check
    2. 6.2  Configure_Protection_Masks
    3. 6.3  EEPROM_Write
    4. 6.4  EEPROM_Read
    5. 6.5  EEPROM_Erase
      1. 6.5.1 Erase_Bank
    6. 6.6  EEPROM_GetValidBank
    7. 6.7  EEPROM_UpdateBankStatus
    8. 6.8  EEPROM_UpdatePageStatus
    9. 6.9  EEPROM_UpdatePageData
    10. 6.10 EEPROM_Get_64_Bit_Data_Address
    11. 6.11 EEPROM_Program_64_Bits
    12. 6.12 EEPROM_CheckStatus
    13. 6.13 ClearFSMStatus
  10. 7 Single-Unit Emulation
    1. 7.1 User-Configuration
      1. 7.1.1 EEPROM_Config.h
      2. 7.1.2 F28P65x_EEPROM.c
    2. 7.2 EEPROM Functions
      1. 7.2.1  EEPROM_Config_Check
      2. 7.2.2  Configure_Protection_Masks
      3. 7.2.3  EEPROM_Write
      4. 7.2.4  EEPROM_Read
      5. 7.2.5  EEPROM_Erase
      6. 7.2.6  EEPROM_GetValidBank
      7. 7.2.7  EEPROM_Get_64_Bit_Data_Address
      8. 7.2.8  EEPROM_UpdateBankStatus
      9. 7.2.9  EEPROM_UpdatePageStatus
      10. 7.2.10 EEPROM_UpdatePageData
      11. 7.2.11 EEPROM_Get_64_Bit_Data_Address
      12. 7.2.12 EEPROM_Program_64_Bits
      13. 7.2.13 EEPROM_CheckStatus
      14. 7.2.14 ClearFSMStatus
    3. 7.3 Testing Example
  11. 8 Application Integration
    1. 8.1 Software Functionality and Flow
  12. 9 Adapting to Other Gen 3 C2000 MCUs
  13. 10Flash API
    1. 10.1 Flash API Checklist
      1. 10.1.1 Flash API Do's and Do Not's
  14. 11Source File Listing
  15. 12Troubleshooting
    1. 12.1 General
  16. 13Conclusion
  17. 14References
  18. 15Revision History

2 Difference Between EEPROM and On-Chip Flash

EEPROMs are available in different capacities and connect with the host microcontrollers via a serial and sometimes parallel interface. The serial inter-integrated circuit (I2C) and serial peripheral interface (SPI) are quite popular due to the minimal number of pins/traces. EEPROMs can be programmed and erased electrically and most of the serial EEPROMs allow byte-by-byte program or erase operations.

The major difference between EEPROM and Flash operations is seen in the erase operation. The EEPROM does not require a sector erase operation. One can erase a particular byte requiring the specified time. However, the smallest unit of an erase operation in Flash is one sector.

Flash erase and write cycles are performed by applying time-controlled voltages to each cell. In the erase condition, each cell (bit) reads logical 1. Therefore, every Flash location of a C2000 Real-Time Controller reads 0xFFFF when erased. Through programming, the cell can be changed to logical 0. Any word can be overwritten to change a bit from logical 1 to 0 (assuming corresponding ECC has not been programmed); but not the other way around. The on-chip Flash memory on Generation 3 C2000 MCUs parts require TI-supplied specific algorithms (Flash API) for erase and write operations.

Note: For the Flash erase/program/read times, see the Flash Parameters section in Electrical Characteristics of the device-specific data manual.