The Configure_Protection_Masks provides functionality to disable Write/Erase protection for any sector selected for EEPROM Emulation. This is done by calculating the appropriate Masks to pass to the Fapi_setupBankSectorEnable function. This requires two parameters, a pointer to the selected Flash Sector numbers, and the number of Flash Sectors to be emulated. For more details on the implementation of the Fapi_setupBankSectorEnable function, see the TMS320F28P65x Flash API Version 3.02.00.00 Reference Guide.

The return value of this function is used to disable Write/Erase protection in Flash Sectors selected for EEPROM Emulation.

// Initialize a variable to store the bits indicating which sectors  
// need to have write/erase protection disabled. 
// The first lower 32 bits represent CMDWEPROTA and the upper 32 
// bits represent CMDWEPROTB.
uint64 Protection_Mask_Sectors = 0;

// If we have more than one Flash Sector
if (Num_EEPROM_Sectors > 1)
{

    uint64 Unshifted_Sectors;
    uint16 Shift_Amount;

    // If all sectors use Mask A
    if (Sector_Numbers[0] < 32 && Sector_Numbers[1] < 32)
    {

        // Configure Mask A
        Unshifted_Sectors = (uint64) 1 << Num_EEPROM_Sectors;
        Unshifted_Sectors -= 1;
        Protection_Mask_Sectors |= (Unshifted_Sectors << Sector_Numbers[0]);

    }// If all sectors use Mask B
    else if (Sector_Numbers[0] > 31 && Sector_Numbers[1] > 31)
    {

        // Configure Mask B
        Shift_Amount = ((Sector_Numbers[1] - 32)/8) - ((Sector_Numbers[0] - 32)/8) + 1;
        Unshifted_Sectors = (uint64) 1 << Shift_Amount;
        Unshifted_Sectors -= 1;
        Protection_Mask_Sectors |= (Unshifted_Sectors << ((Sector_Numbers[0] - 32)/8));
        Protection_Mask_Sectors = Protection_Mask_Sectors << 32;

    } else // If both Masks A and B need to be configured
    {

        // Configure Mask B
        Shift_Amount = ((Sector_Numbers[1] - 32)/8) + 1;
        Unshifted_Sectors = (uint64) 1 << Shift_Amount;
        Unshifted_Sectors -= 1;
        Protection_Mask_Sectors |= Unshifted_Sectors;
        Protection_Mask_Sectors = Protection_Mask_Sectors << 32;

        // Configure Mask A
        Unshifted_Sectors = (uint64) 1 << ((32 - Sector_Numbers[0]) + 1);
        Unshifted_Sectors -= 1;
        Protection_Mask_Sectors |= (Unshifted_Sectors << Sector_Numbers[0]);

    }


} else { // If only using 1 Flash Sector

    if(Sector_Numbers[0] < 32)
    {
        Protection_Mask_Sectors |= ((uint64) 1 << Sector_Numbers[0]);
    } else
    {
        Protection_Mask_Sectors |= ((uint64) 1 << ((Sector_Numbers[0] - 32)/8));
        Protection_Mask_Sectors = Protection_Mask_Sectors << 32;
    }

}

return Protection_Mask_Sectors;

For comparison, the F28003x EEPROM Configure_Protection_Masks projects functionality differs from that of the F28P65x EEPROM project example with the amount of sectors available for protection. Each bit in the Write/Erase protection mask represents an individual sector.

// Initialize a variable to store the bits indicating which sectors need to have write/erase
    // protection disabled.
    uint16 Protection_Mask_Sectors = 0;
    uint16 Unshifted_Sectors;

    // If we have more than one Flash Sector
    if (Num_EEPROM_Sectors > 1)
    {
        // Configure mask
        Unshifted_Sectors = (uint16) 1 << Num_EEPROM_Sectors;
        Unshifted_Sectors -= 1;
        Protection_Mask_Sectors |= (Unshifted_Sectors << Sector_Numbers[0]);

    } else { // If only using 1 Flash Sector

        if(Sector_Numbers[0] < 16)
        {
            Unshifted_Sectors = (uint16) 1 << Sector_Numbers[0];
            Protection_Mask_Sectors |= Unshifted_Sectors;
        }

    }

    return Protection_Mask_Sectors;