Home Power management Power stages Gallium nitride (GaN) power stages

LMG3410R070

ACTIVE

600-V 70mΩ GaN with integrated driver and protection

Product details

VDS (max) (V) 600 RDS(on) (mΩ) 70 ID (max) (A) 12 Features Bottom-side cooled, Latched overcurrent protection, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 150
VDS (max) (V) 600 RDS(on) (mΩ) 70 ID (max) (A) 12 Features Bottom-side cooled, Latched overcurrent protection, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 150
VQFN (RWH) 32 64 mm² (8 mm × 8 mm)
  • TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles
  • Enables High Density Power Conversion Designs
    • Superior System Performance Over Cascode or Stand-alone GaN FETs
    • Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout
    • Adjustable Drive Strength for Switching Performance and EMI Control
    • Digital Fault Status Output Signal
    • Only +12 V Unregulated Supply Needed
  • Integrated Gate Driver
    • Zero Common Source Inductance
    • 20 ns Propagation Delay for MHz Operation
    • Process-tuned Gate Bias Voltage for Reliability
    • 25 to 100V/ns User Adjustable Slew Rate
  • Robust Protection
    • Requires No External Protection Components
    • Over-current Protection with <100ns Response
    • >150V/ns Slew Rate Immunity
    • Transient Overvoltage Immunity
    • Overtemperature Protection
    • UVLO Protection on All Supply Rails
  • Device Options:
    • LMG3410R070: Latched Overcurrent Protection
    • LMG3411R070: Cycle-by-cycle Overcurrent Protection
  • TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles
  • Enables High Density Power Conversion Designs
    • Superior System Performance Over Cascode or Stand-alone GaN FETs
    • Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout
    • Adjustable Drive Strength for Switching Performance and EMI Control
    • Digital Fault Status Output Signal
    • Only +12 V Unregulated Supply Needed
  • Integrated Gate Driver
    • Zero Common Source Inductance
    • 20 ns Propagation Delay for MHz Operation
    • Process-tuned Gate Bias Voltage for Reliability
    • 25 to 100V/ns User Adjustable Slew Rate
  • Robust Protection
    • Requires No External Protection Components
    • Over-current Protection with <100ns Response
    • >150V/ns Slew Rate Immunity
    • Transient Overvoltage Immunity
    • Overtemperature Protection
    • UVLO Protection on All Supply Rails
  • Device Options:
    • LMG3410R070: Latched Overcurrent Protection
    • LMG3411R070: Cycle-by-cycle Overcurrent Protection

The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection datasheet (Rev. F) PDF | HTML Apr 6, 2020
Product overview HVDC QFN-Packaged GaN Power Devices PDF | HTML Mar 31, 2026
Technical article The benefits of GaN for battery test systems PDF | HTML Oct 7, 2022
White paper Achieving GaN Products With Lifetime Reliability PDF | HTML Jun 2, 2021
White paper Four key design considerations when adding energy storage to solar power grids Mar 22, 2021
White paper Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs Jan 5, 2021
More literature A Generalized Approach to Determine the Switching Lifetime of a GaN FET Oct 20, 2020
Analog design Journal Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC Sep 22, 2020
Application note Thermal Considerations for Designing a GaN Power Stage (Rev. B) Aug 4, 2020
Technical article Designing highly efficient, powerful and fast EV charging stations PDF | HTML Aug 6, 2019
Technical article No avalanche? No problem! GaN FETs are surge robust PDF | HTML Apr 3, 2019
More literature GaN FET Reliability to Power-line Surges Under Use-conditions Mar 25, 2019
Application note Third quadrant operation of GaN Feb 25, 2019
Technical article Searching for the newest innovations in power? Find them at APEC PDF | HTML Feb 9, 2019
Technical article Gallium nitride: supporting applications from watts to kilowatts PDF | HTML Dec 19, 2018
White paper Direct-drive configuration for GaN devices (Rev. A) Nov 19, 2018
Application note High Voltage Half Bridge Design Guide for LMG3410 Smart GaN FET (Rev. A) Nov 10, 2018
Application brief Overcurrent Protection in High-Density GaN Power Designs PDF | HTML Oct 19, 2018
Technical article GaN reliability standards reach milestone PDF | HTML Sep 18, 2017
Technical article Using Digital Power MCUs for Intelligent EV Battery Charging PDF | HTML Jul 3, 2017
Technical article The power to innovate industrial design PDF | HTML Mar 27, 2017
Technical article The power to do even more with GaN PDF | HTML Mar 25, 2017
White paper Enabling high-voltage power delivery through the power process chain Mar 23, 2017
Technical article Power Tips: Improve power supply reliability with high voltage GaN devices PDF | HTML Nov 3, 2016
Technical article It’s hip to be square PDF | HTML Oct 20, 2016
Technical article Is integrated GaN changing the conventional wisdom? PDF | HTML Oct 7, 2016
Technical article Don't forget the gate driver: it’s the muscle PDF | HTML Sep 20, 2016
Technical article Power Tips: How GaN devices boost resonant converter efficiency PDF | HTML Aug 25, 2016
Technical article Advantages of wide band gap materials in power electronics – part 2 PDF | HTML Jun 21, 2016
More literature Product-level Reliability of GaN Devices Apr 26, 2016
Technical article From blue light to green power PDF | HTML Apr 26, 2016
White paper Application-Relevant Qualification of Emerging Semiconductor Power Devices, GaN Mar 31, 2016
Technical article Let’s GaN together, reliably PDF | HTML Mar 22, 2016
White paper Optimizing GaN performance with an integrated driver PDF | HTML Feb 24, 2016
White paper Redefining power management through high-voltage innovation Nov 12, 2015
White paper GaN FET-Based CCM Totem-Pole Bridgeless PFC Oct 2, 2015
White paper A comprehensive methodology to qualify the reliability of GaN products Mar 2, 2015
White paper Advancing Power Supply Solutions Through the Promise of GaN Feb 24, 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG34XX-BB-EVM — LMG34xx GaN system-level evaluation motherboard for LMG341x Family

The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)

User guide: PDF
Supported products & hardware
In stock
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Daughter card

LMG3410-HB-EVM — LMG3410R070 600-V 70-mΩ GaN half-bridge daughter card

The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. (...)
User guide: PDF
Supported products & hardware
In stock
Limit:
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Simulation model

LMG3410 TINA-TI Spice Model (Rev. B)

SNOM608B.TSC (158 KB) - TINA-TI Spice model
Supported products & hardware
Simulation model

LMG3410R070 Unencrypted PSpice Model (Rev. D)

SNOM593D.ZIP (57 KB) - PSpice model
Supported products & hardware
Calculation tool

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
Supported products & hardware
Calculation tool

SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet

Supported products & hardware
Calculation tool

SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet

Supported products & hardware
Reference design

PMP20873 — 99% Efficient 1kW GaN-based CCM Totem-pole Power Factor Correction (PFC) Converter Reference Design

Continuous-Conduction-Mode (CCM) Totem-pole power factor correction (PFC) is a simple but efficient power converter.  To achieve 99% efficiency, there are many design details that need to be taken into account.  The PMP20873 reference design uses TI’s 600VGaN  power stage, (...)
Supported products & hardware
Reference design

PMP21309 — 24-V/500-W resonant converter reference design with HV GaN FET

This reference design is a high-frequency resonant converter reference design. The output voltage is regulated to 24 V with input voltage ranges from 380 V to 400 V using a resonant tank with 500 kHz resonant frequency. A 97.9% peak efficiency is achieved with this design using TI’s (...)
Supported products & hardware
Reference design

PMP21842 — 12-V/500-W resonant converter reference design with HV GaN FET

This high-frequency resonant converter reference design regulates a 12-V output from a 380-V to 400-V input voltage range using a resonant tank with 500 kHz resonant frequency. A peak efficiency of 96.0% (bias supply included) is achieved with this design using our high-voltage GaN device along (...)
Supported products & hardware
Reference design

PMP41006 — 1-kW reference design with CCM totem pole PFC and current-mode LLC realized by C2000™ and GaN

This reference design demonstrates a hybrid hysteresis control (HHC) method, a kind of current-mode control method on half-bridge LLC stage with a C2000™ F28004x microcontroller. The hardware is based on TIDA-010062, which is 1-kW, 80-Plus titanium, GaN CCM totem pole bridgeless PFC and half-bridge (...)

Supported products & hardware
Reference design

PMP41043 — 1.6-kW reference design with CCM totem pole PFC and current-mode LLC realized by C2000 and GaN

This reference design demonstrates a hybrid hysteresis control (HHC) method, a current mode control method on half-bridge LLC stage with a C2000 F28004x microcontroller. The hardware is based on TIDA-010062 which is 1-kW, 80 Plus titanium, GaN CCM totem pole bridgeless PFC and half-bridge LLC (...)

Supported products & hardware
Reference design

TIDA-010062 — 1-kW, 80+ titanium, GaN CCM totem pole bridgeless PFC and half-bridge LLC with LFU reference design

This reference design is a digitally controlled, compact 1-kW AC/DC power supply design for server power supply unit (PSU) and telecom rectifier applications. This highly efficient design supports two main power stages, including a front-end continuous conduction mode (CCM) totem-pole bridgeless (...)
Supported products & hardware
Reference design

TIDM-02008 — Bidirectional high density GaN CCM totem pole PFC using C2000™ MCU

This reference design is a 3.-kW bidirectional interleaved continuous conduction mode (CCM) totem-pole (TTPL) bridgeless power factor correction (PFC) power stage using a C2000™ real-time controller and LMG3410R070 gallium nitride (GaN) with integrated driver and protection. (...)

Supported products & hardware
Reference design

TIDM-1007 — High efficiency GaN CCM totem pole bridgeless Power Factor Correction (PFC) reference design

Interleaved Continuous Conduction Mode (CCM) Totem Pole (TTPL) Bridgeless Power Factor Correction (PFC) is an attractive power topology with use of high band-gap GaN devices, because of high efficiency and reduced size of the power supply. This design illustrates a method to control this power (...)
Supported products & hardware
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