CSD25483F4
-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 245 mOhm, gate ESD protection
CSD25483F4
- Ultra-low on-resistance
- Ultra-low Qg and Qgd
- High operating drain current
- Ultra-small footprint (0402 case size)
- 1.0 mm × 0.6 mm
- Ultra-low profile
- Maximum height: 0.36-mm
- Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
- Lead and halogen free
- RoHS compliant
This 210-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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Technical documentation
| Top documentation | Type | Title | Format options | Date |
|---|---|---|---|---|
| * | Data sheet | CSD25483F4 20-V P-Channel FemtoFET™ MOSFET datasheet (Rev. F) | PDF | HTML | 10 Mar 2022 |
| Application brief | Estimating Leakage Currents of Power MOSFETs | PDF | HTML | 31 Oct 2025 | |
| Application note | MOSFET Support and Training Tools (Rev. G) | PDF | HTML | 27 Oct 2025 | |
| Application note | Semiconductor and IC Package Thermal Metrics (Rev. D) | PDF | HTML | 25 Mar 2024 | |
| Application note | Using MOSFET Transient Thermal Impedance Curves In Your Design | PDF | HTML | 18 Dec 2023 | |
| Application note | Solving Assembly Issues with Chip Scale Power MOSFETs | PDF | HTML | 14 Dec 2023 | |
| Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | 13 Mar 2023 | |
| Application brief | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | 31 May 2022 | |
| More literature | WCSP Handling Guide | 07 Nov 2019 | ||
| Design guide | FemtoFET Surface Mount Guide (Rev. D) | 07 Jul 2016 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
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| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| PICOSTAR (YJC) | 3 | Ultra Librarian |
Ordering & quality
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Support & training
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