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UCC21222

ACTIVE

Basic, 4A/6A dual-channel isolated gate driver w/ disable, programmable deadtime

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UCC21330 ACTIVE Basic, 4A/6A dual-channel isolated gate driver w/ disable, programmable deadtime Improved CMTI, faster VDD startup

UCC21222

ACTIVE
Data sheet Order now

Product details

Number of channels 2 Isolation rating Basic Power switch GaNFET, IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 990 Transient isolation voltage (VIOTM) (VPK) 4242 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, Programmable dead time Output VCC/VDD (min) (V) 9.2 Output VCC/VDD (max) (V) 18 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 8
Number of channels 2 Isolation rating Basic Power switch GaNFET, IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 990 Transient isolation voltage (VIOTM) (VPK) 4242 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, Programmable dead time Output VCC/VDD (min) (V) 9.2 Output VCC/VDD (max) (V) 18 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 8
SOIC (D) 16 59.4 mm² (9.9 mm × 6 mm)

  • Universal: dual low-side, dual high-side or halfbridge driver

  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 8V, VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing
  • Safety-related certifications (planned):
    • 4242VPK isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 3000VRMS isolation for 1 minute per UL 1577
    • CQC Certification per GB4943.1-2022

  • Universal: dual low-side, dual high-side or halfbridge driver

  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 8V, VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing
  • Safety-related certifications (planned):
    • 4242VPK isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 3000VRMS isolation for 1 minute per UL 1577
    • CQC Certification per GB4943.1-2022

The UCC21222 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21222 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 3kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21222 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21222 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21222 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 3kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21222 device enables high efficiency, high power density, and robustness in a wide variety of power applications.
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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet UCC21222 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver datasheet (Rev. C) PDF | HTML Nov 11, 2024
* User guide Gate Drive Voltage vs. Efficiency Apr 25, 2019
Certificate VDE Certificate for Basic Isolation for DIN EN IEC 60747-17 (Rev. AA) Jun 11, 2026
Certificate UCC21220 CQC Certificate of Product Certification PDF | HTML Aug 16, 2023
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML Dec 16, 2021
Certificate FPPT2 - Nonoptical Isolating Devices UL 1577 Certificate of Compliance Oct 26, 2021
Test report Peak Efficiency at 99%, 585-W High-Voltage Buck Reference Design Apr 24, 2020
Application brief External Gate Resistor Selection Guide (Rev. A) Feb 28, 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) Feb 28, 2020
Certificate UL Certification E181974 Vol 4. Sec 9 (Rev. A) Jul 22, 2019
Application brief How to Drive High Voltage GaN FETs with UCC21220A Mar 6, 2019
White paper Impact of an isolated gate driver (Rev. A) Feb 20, 2019
Application note Common Mode Transient Immunity (CMTI) for UCC2122x Isolated Gate Drivers Jul 19, 2018
Application note Solar Inverter Layout Considerations for UCC21220 Jun 6, 2018
White paper Demystifying high-voltage power electronics for solar inverters Jun 6, 2018
Technical article Boosting efficiency for your solar inverter designs PDF | HTML May 24, 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC21220EVM-009 — UCC21220 4-A, 6-A 3.0-kVRMS Isolated Dual-Channel Gate Driver Evaluation Module

UCC21220EVM-009 is designed for evaluating UCC21220, which is a 3.0-kVRMS Isolated Dual-Channel Gate Driver with 4.0-A source and 6.0-A sink peak current capability. This EVM could be served to evaluate the driver IC against its datsheet. The EVM can also be used as Driver IC component selection (...)
User guide: PDF
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Simulation model

UCC21222-Q1 PSpice Transient Model

SLUM622.ZIP (57 KB) - PSpice model
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Simulation model

UCC21222-Q1 Unencrypted PSpice Transient Model

SLUM623.ZIP (3 KB) - PSpice model
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Calculation tool

SLURAZ5 — UCC21520 Bootstrap Calculator 1.0

Supported products & hardware
Reference design

PMP40500 — 54-VDC input, 12-V 42-A output half-bridge reference design

This 12-V, 42-A output half-bridge reference design is for bus converters in wired networking campus and branch switches. The design features high efficiency and various fault protections (over-current and short-circuit). The design provides an efficiency comparison using 3 kVRMS basic and (...)

Supported products & hardware
Reference design

PMP41006 — 1-kW reference design with CCM totem pole PFC and current-mode LLC realized by C2000™ and GaN

This reference design demonstrates a hybrid hysteresis control (HHC) method, a kind of current-mode control method on half-bridge LLC stage with a C2000™ F28004x microcontroller. The hardware is based on TIDA-010062, which is 1-kW, 80-Plus titanium, GaN CCM totem pole bridgeless PFC and half-bridge (...)

Supported products & hardware
Reference design

PMP41043 — 1.6-kW reference design with CCM totem pole PFC and current-mode LLC realized by C2000 and GaN

This reference design demonstrates a hybrid hysteresis control (HHC) method, a current mode control method on half-bridge LLC stage with a C2000 F28004x microcontroller. The hardware is based on TIDA-010062 which is 1-kW, 80 Plus titanium, GaN CCM totem pole bridgeless PFC and half-bridge LLC (...)

Supported products & hardware
Reference design

TIDA-010203 — 4-kW single-phase totem pole PFC reference design with C2000 and GaN

This reference design is a 4-kW CCM totem-pole PFC with F280049/F280025 control card and LMG342x EVM board. This design demos a robust PFC solution, which avoids isolated current sense by putting the controller's ground in the middle of a MOSFET leg. Benefitting from non-isolation, AC current (...)
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SOIC (D) 16 Ultra Librarian
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