Home Power management Gate drivers Isolated gate drivers

UCC21520-Q1

ACTIVE

Automotive 4-A, 6-A, 5.7-kVRMS isolated dual-channel gate driver with dual input, disable, deadtime

A newer version of this product is available

open-in-new Compare alternates
This product continues to be available for existing customers. New designs should consider an alternate product.
Pin-for-pin with same functionality to the compared device
NEW UCC21550-Q1 ACTIVE Automotive, 4A/6A, 5-kVRMS dual-channel isolated gate driver with DIS and DT pins for IGBT Tighter VCCI range supporting digital controller thresholds. New DT equation. Increased CMTI and wider operating temperature range.

Product details

Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Disable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 6.5, 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8
Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Disable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 6.5, 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1
  • Functional safety quality-managed
  • Junction temperature range –40 to +150°C
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Surge immunity up to 10kV
  • Isolation barrier life >40 years
  • 4A peak source, 6A peak sink output
  • 3V to 18V input VCCI range to interface with both digital and analog controllers
  • Up to 25V VDD output drive supply
    • 5V and 8V VDD UVLO options
  • Programmable overlap and dead time
  • Fast disable for power sequencing
  • Safety-related certifications:
    • 8000VPK reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5.7kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2022
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1
  • Functional safety quality-managed
  • Junction temperature range –40 to +150°C
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Surge immunity up to 10kV
  • Isolation barrier life >40 years
  • 4A peak source, 6A peak sink output
  • 3V to 18V input VCCI range to interface with both digital and analog controllers
  • Up to 25V VDD output drive supply
    • 5V and 8V VDD UVLO options
  • Programmable overlap and dead time
  • Fast disable for power sequencing
  • Safety-related certifications:
    • 8000VPK reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5.7kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2022

The UCC21520-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500VDC.

Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously , and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21520-Q1 enables high efficiency, high power density, and robustness.

The UCC21520-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500VDC.

Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously , and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21520-Q1 enables high efficiency, high power density, and robustness.

Download View video with transcript Video

Request more information

The UCC21520-Q1 safety manual and safety fit rate report are available. Request now

Similar products you might be interested in

open-in-new Compare alternates
Same functionality with different pin-out to the compared device
UCC21540-Q1 ACTIVE Automotive 5.7kVRMS, 4A/6A dual-channel isolated gate driver with 8V UVLO & 3.3mm ch-to-ch spacing Increased output channel-to-channel spacing; lower VDD range

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 18
Type Title Date
* Data sheet UCC21520-Q1 4A, 6A, 5.7kVRMS Isolated Dual-Channel Gate Driver for Automotive datasheet (Rev. E) PDF | HTML 17 Jun 2024
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 Feb 2024
Application note Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) PDF | HTML 25 Jan 2024
Certificate UCC215xx CQC Certificate of Product Certification 17 Aug 2023
Certificate UCC21520 CQC Certificate of Product Certification (Rev. A) 16 Aug 2023
Certificate UL Certification E181974 Vol 4. Sec 7 (Rev. C) 02 Dec 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dec 2021
EVM User's guide Using the UCC21520EVM-286, UCC21521CEVM-286, and UCC21530EVM286 User's Guide (Rev. C) PDF | HTML 21 Oct 2021
More literature Protecting Power Devices in Electric Vehicle Applications 23 Mar 2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Certificate CSA Product Certificate (Rev. A) 15 Aug 2019
User guide Gate Drive Voltage vs. Efficiency 25 Apr 2019
White paper Driving the future of HEV/EV with high-voltage solutions (Rev. B) 16 May 2018
Application brief Reducing Switching Losses in On-Board Chargers for Electric Vehicles 27 Mar 2018
White paper Cities grow smarter through innovative semiconductor technologies 07 Jul 2017
White paper Charging stations: Toward an EV support infrastructure 09 May 2017
Application note UCC21520, a Universal Isolated Gate Driver with Fast Dynamic Response (Rev. A) PDF | HTML 05 Jul 2016

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC21520EVM-286 — UCC21520 4A/6A isolated dual-channel gate driver evaluation module

UCC21520EVM-286 is designed for evaluating UCC21520DW, which is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current capability. This EVM could be served as a reference design for driving power MOSFETS, IGBTS, and SiC MOSFETS with UCC21520 pin function identification, (...)

User guide: PDF | HTML
Not available on TI.com
Simulation model

UCC21520 PSpice Transient Model

SLUM544.ZIP (59 KB) - PSpice Model
Simulation model

UCC21520 TINA-TI Reference Design

SLUM552.TSC (168 KB) - TINA-TI Reference Design
Simulation model

UCC21520 TINA-TI Transient Spice Model

SLUM551.ZIP (23 KB) - TINA-TI Spice Model
Simulation model

UCC21520 Unencrypted PSpice Transient Model

SLUM543.ZIP (3 KB) - PSpice Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

TIDA-01604 — 98.6% Efficiency, 6.6-kW Totem-Pole PFC Reference Design for HEV/EV Onboard Charger

This reference design functions from a base of silicon carbide (SiC) MOSFETs that are driven by a C2000 microcontroller (MCU) with SiC-isolated gate drivers. The design implements three-phase interleaving and operates in continuous conduction mode (CCM) to achieve a 98.46% efficiency at a 240-V (...)
Design guide: PDF
Schematic: PDF
Package Pins CAD symbols, footprints & 3D models
SOIC (DW) 16 Ultra Librarian

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos