Product details


Number of channels (#) 1 Power switch MOSFET, GaNFET Peak output current (A) 6 Input VCC (Min) (V) 4 Input VCC (Max) (V) 18 Features Split Output, Regulated gate driver voltage Operating temperature range (C) -40 to 140 Rise time (ns) 9 Fall time (ns) 4 Prop delay (ns) 14 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog open-in-new Find other Low-side drivers

Package | Pins | Size

WSON (DRV) 6 4 mm² 2 x 2 open-in-new Find other Low-side drivers


  • Enhancement Mode Gallium Nitride FETs (eGANFETs)
  • 4-V to 18-V Single Supply Range VDD Range
  • Drive Voltage VREF Regulated to 5 V
  • 4-A Peak Source and 6-A Peak Sink Drive Current
  • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity)
  • Split Output Configuration (Allows Turnon and Turnoff Optimization for Individual FETs)
  • Fast Propagation Delays (14-ns Typical)
  • Fast Rise and Fall Times (9-ns and 5-ns Typical)
  • TTL and CMOS Compatible Inputs (Independent of Supply Voltage Allow Easy Interface-to-Digital and Analog Controllers)
  • Dual-Input Design Offering Drive Flexibility (Both Inverting and Noninverting Configurations)
  • Output Held Low When Inputs Are Floating
  • VDD Under Voltage Lockout (UVLO)
  • Optimized Pinout Compatible With eGANFET Footprint for Easy Layout
  • 2.00 mm × 2.00 mm SON-6 Package With Exposed Thermal and Ground Pad, (Minimized Parasitic Inductances to Reduce Gate Ringing)
  • Operating Temperature Range of –40°C to 140°C

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The UCC27611 is a single-channel, high-speed, gate driver optimized for 5-V drive, specifically addressing enhancement mode GaN FETs. The drive voltage VREF is precisely controlled by internal linear regulator to 5 V. The UCC27611 offers asymmetrical rail-to-rail peak current drive capability with 4-A source and 6-A sink. Split output configuration allows individual turnon and turnoff time optimization depending on FET. Package and pinout with minimum parasitic inductances reduce the rise and fall time and limit the ringing. Additionally, the short propagation delay with minimized tolerances and variations allows efficient operation at high frequencies. The 1-Ω and 0.35-Ω resistance boosts immunity to hard switching with high slew rate dV and dt.

The independence from VDD input signal thresholds ensure TTL and CMOS low-voltage logic compatibility. For safety reason, when the input pins are in a floating condition, the internal input pullup and pulldown resistors hold the output LOW. Internal circuitry on VREF pin provides an undervoltage lockout function that holds output LOW until VREF supply voltage is within operating range. UCC27611 is offered in a small 2.00 mm × 2.00 mm SON-6 package (DRV) with exposed thermal and ground pad that improves the package power-handling capability. The UCC27611 operates over wide temperature range from –40°C to 140°C.

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Technical documentation

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

document-generic User guide
The UCC27611OLEVM-203 aids in the evaluation of high-speed, single channel, low-side driver capable of driving eGANFETs with a regulated 5-V optimized output. The EVM is designed to drive a capacitive load on the output of the UCC27611 device, with connectors provided to offer flexibility to bring (...)
  • Open Loop evaluation module of UCC27611 gate driver device
  • UCC27611 drives a capacitive load on OUTH/OUTL pins
  • Test points, jumper heads, and switches to facilitate evaluation
  • All pins of UCC27611 accessible through test points

Design tools & simulation

SLUM339C.ZIP (45 KB) - PSpice Model
SLUM362E.TSC (761 KB) - TINA-TI Reference Design
SLUM363B.ZIP (5 KB) - TINA-TI Spice Model
SLUM487B.ZIP (2 KB) - PSpice Model

Reference designs

Isolated GaN Driver Reference Design
TIDA-00785 — This reference design consists of a reinforced dualchannel digital isolator, a GaN gate driver, and isolated power supplies. This compact reference design is intended to control GaN in power supplies, DC-to-DC converters, synchronous rectification, solar inverters, and motor control. An open-loop (...)
document-generic Schematic document-generic User guide

CAD/CAE symbols

Package Pins Download
WSON (DRV) 6 View options

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