UCC5390-Q1 Automotive 10A/10A single-channel isolated gate driver for bipolar supply (E) | TI.com

UCC5390-Q1 (PREVIEW) Automotive 10A/10A single-channel isolated gate driver for bipolar supply (E)

Automotive 10A/10A single-channel isolated gate driver for bipolar supply (E) - UCC5390-Q1
Datasheet
 

Sample availability

Preproduction samples are available (PUCC5390ECQDWVRQ1). Request now

Description

The UCC5390-Q1 is a single-channel, isolated gate driver 10-A source and 10-A sink peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5390-Q1 has its UVLO2 referenced to GND2, which facilitates bipolar supplies and optimizes SiC and IGBT switching behavior and robustness.

The UCC5390-Q1 is available in 8.5 mm SOIC-8 (DWV) package and can support isolation voltage up to 5 kVRMS. With its high drive strength and true UVLO detection, this device is a good fit for driving IGBT and SiC MOSFETs in applications such as on-board chargers and traction inverters.

Compared to an optocoupler, the UCC5390-Q1 has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

Features

  • Single channel SiC/IGBT isolated gate driver
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • CDM ESD classification level C6
  • 12-V UVLO referenced to GND2
  • 8-pin DWV (8.5mm creepage) package
  • 60-ns (typical) propagation delay
  • Small part-to-part skew in propagation delay
  • 100-kV/µs minimum CMTI
  • Isolation barrier life > 40 Years
  • 10-A minimum peak current
  • 3-V to 15-V input supply voltage
  • Up to 33-V driver supply voltage
  • Negative 5-V handling capability on input pins
  • Safety-related certifications:
    • 7000-VPK isolation (DWV) per DIN V VDE V 0884-11:2017-01 (planned)
    • 5000-VRMS (DWV) isolation rating for 1 minute per UL 1577 (planned)
    • CQC Certification per GB4943.1-2011 (planned)
  • CMOS inputs
  • Operating temperature: –40°C to +125°C

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Parametrics

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Part number Order Isolation rating (Vrms) DIN V VDE V 0884-10 transient overvoltage rating (Vpk) DIN V VDE V 0884-10 working voltage (Vpk) Number of channels (#) Power switch Enable/disable function Output VCC/VDD (Max) (V) Output VCC/VDD (Min) (V) Input VCC (Min) (V) Input VCC (Max) (V) Peak output current (A) Prop delay (ns) Operating temperature range (C) Package Group
UCC5390-Q1 Order now 5000     7000     2121     1     IGBT, SiCFET       33     13.2     3     15     17     65     -40 to 125     SOIC | 8    
UCC5310 Order now 3000
5000    
4242
7000    
990
2121    
1     IGBT         33     13.2     3     15     2.2     60     -40 to 125     SOIC | 8
SOIC | 8    
UCC5320 Order now 3000
5000    
4242
7000    
990
2121    
1     IGBT         33     13.2     3     15     4.4     60     -40 to 125     SOIC | 8
SOIC | 8    
UCC5350 Order now 3000     4242     990     1     MOSFET
IGBT
SiCFET
GaNFET    
    33     9.5     3     15     10     65     -40 to 125     SOIC | 8    
UCC5390 Order now 3000
5000    
4242
7000    
990
2121    
1     IGBT         33     13.2     3     15     17     65     -40 to 125     SOIC | 8
SOIC | 8