UCC5350-Q1

• 5-kV_RMS and 3-kV_RMS single-channel isolated gate driver
• AEC-Q100 qualified for automotive applications
  • Temperature grade 1
  • HBM ESD classification level H2
  • CDM ESD classification level C6
• ±5-A minimum peak current drive strength
• 3-V to 15-V input supply voltage
• Up to 33-V driver supply voltage
• 100-V/ns minimum CMTI
• Negative 5-V handling capability on input pins
• 100-ns (maximum) propagation delay and <25ns part-to-part skew
• 12-V UVLO
• 8-pin DWV (8.5mm creepage)
  and D (4-mm creepage) packages
• Isolation barrier life > 40 Years
• Safety-related certifications:
  • 7000-V_PK isolation DWV and 4242-V_PK isolation D per DIN V VDE V 0884-11:2017-01 and DIN EN 61010-1 (planned)
  • 5000-V_RMS DWV and 3000-V_RMS D
    isolation rating for 1 minute per UL 1577 (planned)
  • CQC certification per GB4943.1-2011
    D and DWV (planned)
• CMOS inputs
• Operating junction temperature: –40°C to +150°C

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The UCC5350-Q1 is a single-channel, isolated gate driver with 5-A source and 5-A sink minimum peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5350-Q1 has a CLAMP pin to connect the transistor gate to an internal clamp to prevent false turn-on caused by Miller current.

The UCC5350-Q1 is available in a 4 mm SOIC-8 (D) or 8.5 mm wide body SOIC-8 (DWV) package and can support isolation voltage up to 3-kV_RMS and 5-kV_RMS, respectively. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. The UCC5350-Q1 is a good fit for driving IGBTs or MOSFETs in applications such as high-voltage traction inverters and on-board chargers.

Compared to an optocoupler, the UCC5350-Q1 has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.