Gehäuseinformationen
| Gehäuse | Pins VQFN (RGE) | 24 |
| Betriebstemperaturbereich (°C) -40 to 95 |
| Gehäusemenge | Träger 3.000 | LARGE T&R |
Merkmale von BUF12840
- 10-BIT RESOLUTION
- 12-CHANNEL P-GAMMA
- READS FROM EXTERNAL EEPROM
- TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS
- RAIL-TO-RAIL OUTPUT:
- 300mV Min Swing-to-Rail (10mA)
- 200mV Min Swing-to-Rail (5mA)
- LOW SUPPLY CURRENT
- SUPPLY VOLTAGE: 9V to 20V
- DIGITAL SUPPLY: 2V to 5.5V
- TWO-WIRE INTERFACE: Supports 400kHz and 3.4MHz Operation
- APPLICATIONS
- TFT-LCD REFERENCE DRIVERS
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Beschreibung von BUF12840
The BUF12840 offers 12 programmable gamma channels with external electrically erasable programmable read-only memory (EEPROM) read capabilities.
The BUF12840 has two separate memory banks that allow simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma channels offer a rail-to-rail output that typically swings to within 200mV of either supply rail with a 5mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400kHz and high-speed data transfers up to 3.4MHz.
The BUF12840 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF12840 is offered in a QFN-24 package, and is specified from –40°C to +95°C.