Gehäuseinformationen
Gehäuse | Pins VSONP (DQJ) | 8 |
Betriebstemperaturbereich (°C) -55 to 150 |
Gehäusemenge | Träger 2.500 | LARGE T&R |
Merkmale von CSD17310Q5A
- Optimized for 5V Gate Drive
- Ultralow Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
- APPLICATIONS
- Notebook Point of Load
- Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
- Optimized for Synchronous FET Applications
Beschreibung von CSD17310Q5A
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.