Gehäuseinformationen
| Gehäuse | Pins VSON-CLIP (DPB) | 8 |
| Betriebstemperaturbereich (°C) -55 to 150 |
| Gehäusemenge | Träger 2.500 | LARGE T&R |
Merkmale von CSD86336Q3D
- Half-Bridge Power Block
- 93.0% System Efficiency at 12 A
- Up to 20-A Operation
- High-Frequency Operation (up to 1.5 MHz)
- High-Density SON 3.3-mm × 3.3-mm Footprint
- Optimized for 5-V Gate Drive
- Low-Switching Losses
- Ultra-Low-Inductance Package
- RoHS Compliant
- Halogen Free
- Lead-Free Terminal Plating
Beschreibung von CSD86336Q3D
The CSD86336Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high-current, high-efficiency, and high-frequency capability in a small 3.3-mm × 3.3-mm outline. Optimized for 5-V gate drive applications, this product offers a flexible solution capable of providing a high-density power supply when paired with any 5-V gate drive from an external controller/driver.