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DRV3233-Q1-DESIGN — DRV3233-Q1-DESIGN documentation
Documentation and tools for DRV3233 design support
DRV3233-Q1
Batterie-Dreiphasen-Gate-Treibereinheit (12 V und 24 V) mit präziser Stromerfassung für die Automobi
Datenblatt
DRV3233-Q1
- AEC-Q100 qualified for automotive applications - Temperature options:
- DRV3233EPHP: –40°C to +150°C, TA
- DRV3233QPHP (Preview): –40°C to +125°C,TA
- Functional Safety-Compliant targeted
- Developed for functional safety applications
- Documentation to aid ISO 26262 system design will be available
- Systematic capability up to ASIL D targeted
- Three phase half-bridge gate driver
- Drives six N-channel MOSFETs (NMOS)
- 4.5 to 60-V wide operating voltage range
- Bootstrap architecture for high-side gate driver
- Charge pump for 50mA average gate current
- 100% PWM duty cycle support
- Overdrive supply of external switches
- Smart Gate Drive architecture
- 45-level configurable peak gate drive current up to 1000 / 2000-mA (source / sink)
- Three-step dynamic drive current control
- Soft shutdown for power stage protection
- Low-side Current Sense Amplifier
- Sub-1 mV low input offset across temperature
- 9-level adjustable gain
- SPI-based detailed configuration and diagnostics
- DRVOFF pin to disable driver independently
- High voltage wake up pin (nSLEEP)
- Multiple PWM interface options available
- 6x, 3x, 1x PWM Modes
- PWM over SPI
- Supports 3.3-V, and 5-V Logic Inputs
- Optional programmable OTP for reset settings
- Advanced and configurable protection features
- Battery and power supply voltage monitors
- Phase feedback comparator
- MOSFET VDS and Rsense over current monitors
- Analog Built-In-Self-Test, Clock monitors
- Fault condition indicator pin
The DRV3233 is an integrated smart gate driver for 12-V and 24-V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV3233 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8-mA up to 1-A source and 2-A sink. The DRV3233 can operate from a single power supply with a wide input range of 4.5 to 60-V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.
The DRV3233 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.
A wide range of diagnostics and protection features integrated in the DRV3233 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
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Technische Dokumentation
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Alle anzeigen 2 | Typ | Titel | Datum | ||
|---|---|---|---|---|
| * | Data sheet | DRV3233-Q1 Automotive 24/12-V Battery 3-Phase Gate Driver Unit with accurate current sensing and enhanced diagnostics datasheet (Rev. A) | PDF | HTML | 16 Dez 2024 |
| Application brief | Striking a Balance: Automotive Designs for Enhanced Efficiency and EMI Control | PDF | HTML | 02 Okt 2023 |
Design und Entwicklung
Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.
| Gehäuse | Pins | CAD-Symbole, Footprints und 3D-Modelle |
|---|---|---|
| HTQFP (PHP) | 48 | Ultra Librarian |
Bestellen & Qualität
Beinhaltete Information:
- RoHS
- REACH
- Bausteinkennzeichnung
- Blei-Finish/Ball-Material
- MSL-Rating / Spitzenrückfluss
- MTBF-/FIT-Schätzungen
- Materialinhalt
- Qualifikationszusammenfassung
- Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
- Werksstandort
- Montagestandort
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