Gehäuseinformationen
| Gehäuse | Pins SOIC (D) | 8 |
| Betriebstemperaturbereich (°C) |
| Gehäusemenge | Träger 95 | TUBE |
Merkmale von LM5111
- Independently Drives Two N-Channel MOSFETs
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 5-A Sink and 3-A Source Current Capability
- Two Channels can be Connected in Parallel to Double the Drive Current
- Independent Inputs (TTL Compatible)
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-nF Load)
- Available in Dual Noninverting, Dual Inverting and Combination Configurations
- Supply Rail Undervoltage Lockout Protection (UVLO)ƒ
- LM5111-4 UVLO Configured to Drive PFET through OUT_A and NFET through OUT_B
- Pin Compatible With Industry Standard Gate Drivers
Beschreibung von LM5111
The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak
output current and efficiency. Each compound output driver stage
includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak
from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature. Undervoltage lockout protection is also
provided. The drivers can be operated in parallel with inputs and outputs connected to double the
drive current capability. This device is available in the SOIC package or the thermally enhanced
MSOP-PowerPAD package.