SN74CB3Q3345

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8-kanaliger FET-Busschalter, 3,3 V, 1:1 (SPST), 2 Steuereingänge

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Datenblatt

document-pdfAcrobat SN74CB3Q3345 8-Bit FET BUS Switch 2.5V, 3.3V Low-Voltage High-Bandwidth BUS Switch datasheet (Rev. C) (Englisch) PDF | HTML

SN74CB3Q3345

AKTIV

Datenblatt

Jetzt bestellen

Produktdetails

Protocols

Analog

Configuration

1:1 SPST

Number of channels

8

Bandwidth (MHz)

500

Ron (typ) (mΩ)

4000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Supply current (typ) (µA)

1000

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

64

COFF (typ) (pF)

3.5

CON (typ) (pF)

9

OFF-state leakage current (max) (µA)

1

Ron (max) (mΩ)

9000

VIH (min) (V)

1.7

VIL (max) (V)

0.8

Rating

Catalog

Protocols

Analog

Configuration

1:1 SPST

Number of channels

8

Bandwidth (MHz)

500

Ron (typ) (mΩ)

4000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Supply current (typ) (µA)

1000

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

64

COFF (typ) (pF)

3.5

CON (typ) (pF)

9

OFF-state leakage current (max) (µA)

1

Ron (max) (mΩ)

9000

VIH (min) (V)

1.7

VIL (max) (V)

0.8

Rating

Catalog

VQFN (RGY)

20

15.75 mm² (4.5 mm × 3.5 mm)

TSSOP (PW)

20

41.6 mm² (6.5 mm × 6.4 mm)

TVSOP (DGV)

20

32 mm² (5 mm × 6.4 mm)

SSOP (DBQ)

20

51.9 mm² (8.65 mm × 6 mm)

High-bandwidth datapath (up to 500MHz)
5V-tolerant I/Os with device powered up or powered down
Low and flat ON-state resistance (ron) characteristics over operating range (ron = 4Ω typical)
Rail-to-rail switching on data I/O ports
- 0- to 5V switching with 3.3V VCC
- 0- to 3.3V switching with 2.5V VCC
Bidirectional data flow with near-zero propagation delay
Low input, output capacitance minimizes loading and signal distortion (Cio(OFF) = 4pF typical)
Fast switching frequency (f OE = 20MHz maximum)
Data and control inputs provide undershoot clamp diodes
Low power consumption (ICC = 0.7mA typical)
VCC operating range from 2.3V to 3.6V
Data I/Os support 0- to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V)
Control inputs can be driven by TTL or 5V/3.3V CMOS outputs
Ioff supports partial-power-down mode operation
Latch-up performance exceeds 100mA per JESD 78, class II
ESD performance tested per JESD 22
- 2000V human-body model (A114B, class II)
- 1000V charged-device model (C101)

High-bandwidth datapath (up to 500MHz)
5V-tolerant I/Os with device powered up or powered down
Low and flat ON-state resistance (ron) characteristics over operating range (ron = 4Ω typical)
Rail-to-rail switching on data I/O ports
- 0- to 5V switching with 3.3V VCC
- 0- to 3.3V switching with 2.5V VCC
Bidirectional data flow with near-zero propagation delay
Low input, output capacitance minimizes loading and signal distortion (Cio(OFF) = 4pF typical)
Fast switching frequency (f OE = 20MHz maximum)
Data and control inputs provide undershoot clamp diodes
Low power consumption (ICC = 0.7mA typical)
VCC operating range from 2.3V to 3.6V
Data I/Os support 0- to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V)
Control inputs can be driven by TTL or 5V/3.3V CMOS outputs
Ioff supports partial-power-down mode operation
Latch-up performance exceeds 100mA per JESD 78, class II
ESD performance tested per JESD 22
- 2000V human-body model (A114B, class II)
- 1000V charged-device model (C101)

The SN74CB3Q3345 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3345 provides an optimized interface for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3345 is organized as an 8-bit bus switch with two output-enable (OE, OE) inputs. When OE is high or OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low and OE is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when powered down.

The device has isolation during power off. To maintain the high-impedance state during power up or power down, OE must be tied to VCC through a pullup resistor and OE must be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

The SN74CB3Q3345 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3345 provides an optimized interface for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3345 is organized as an 8-bit bus switch with two output-enable (OE, OE) inputs. When OE is high or OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low and OE is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when powered down.

The device has isolation during power off. To maintain the high-impedance state during power up or power down, OE must be tied to VCC through a pullup resistor and OE must be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

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Top-Dokumentation	Typ	Titel	Format-Optionen	Datum
*	Datenblatt	SN74CB3Q3345 8-Bit FET BUS Switch 2.5V, 3.3V Low-Voltage High-Bandwidth BUS Switch datasheet (Rev. C)	PDF \| HTML	21.08.2026
	Anwendungshinweis	Selecting the Correct Texas Instruments Signal Switch (Rev. E)	PDF \| HTML	02.06.2022
	Anwendungshinweis	Multiplexers and Signal Switches Glossary (Rev. B)	PDF \| HTML	01.12.2021
	Application brief	Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C)	PDF \| HTML	06.01.2021

Design und Entwicklung

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