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SN74LVC1G07-EP

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Datenblatt

SN74LVC1G07-EP

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Produktdetails

Technology family LVC Number of channels 1 IOL (max) (mA) 32 Supply current (max) (µA) 10 IOH (max) (mA) -32 Input type Standard CMOS Output type Open-drain Features Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns) Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
Technology family LVC Number of channels 1 IOL (max) (mA) 32 Supply current (max) (µA) 10 IOH (max) (mA) -32 Input type Standard CMOS Output type Open-drain Features Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns) Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
SOT-SC70 (DCK) 5 4.2 mm² (2 mm × 2.1 mm)
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Supports 5-V VCC Operation
  • Input and Open-Drain Output Accept
    Voltages up to 5.5 V
  • Max tpd of 5.7 ns at 3.3 V
  • Low Power Consumption, 10-µA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Supports 5-V VCC Operation
  • Input and Open-Drain Output Accept
    Voltages up to 5.5 V
  • Max tpd of 5.7 ns at 3.3 V
  • Low Power Consumption, 10-µA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

This single buffer/driver is designed for 1.65-V to 5.5-V VCC operation.

The output of the SN74LVC1G07 device is open drain and can be connected to other open-drain outputs to implement active-low wired-OR or active-high wired-AND functions. The maximum sink current is 32 mA.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

This single buffer/driver is designed for 1.65-V to 5.5-V VCC operation.

The output of the SN74LVC1G07 device is open drain and can be connected to other open-drain outputs to implement active-low wired-OR or active-high wired-AND functions. The maximum sink current is 32 mA.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt SN74LVC1G07-EP datasheet 25.07.2007
* Strahlungs- und Zuverlässigkeitsbericht SN74LVC1G07MDCKREP Reliability Report 13.06.2016
* VID SN74LVC1G07-EP VID V6207645 21.06.2016

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