Gehäuseinformationen
| Gehäuse | Pins CFP (HKR) | 16 |
| Betriebstemperaturbereich (°C) 25 to 25 |
| Gehäusemenge | Träger 25 | TUBE |
Merkmale von TPS7H2201-SP
- Standard micro circuit available, SMD 5962R17220
- Vendor item drawing available, VID V62/23608
- Radiation performance:
- Radiation hardness assurance (RHA) up to TID 100krad(Si)
- Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
- SEFI/SET characterized to LET = 75MeV-cm2/mg
- Integrated single channel eFuse
- Input voltage range: 1.5V to 7V
- Low on-resistance (RON) of :
- 35mΩ maximum at 25°C and VIN = 5V for CFP and KGD
- 23mΩ maximum at 25°C and VIN = 5V for HTSSOP
- 6-A maximum continuous switch current
- Low control input threshold enables use of 1.2, 1.8, 2.5, and 3.3V logic
- Configurable rise time (soft start)
- Reverse current protection
- Programmable and internal current limiting (fast-trip)
- Programmable fault timer (current limit and retry modes)
- Thermal shutdown
- Ceramic and plastic package with thermal pad
Beschreibung von TPS7H2201-SP
The TPS7H2201 is a single channel eFuse that provides configurable rise time to minimize inrush current and reverse current protection. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5V to 7V and can support a maximum continuous current of 6A. The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals.
The TPS7H2201 is available in a ceramic and plastic package with integrated thermal pad allowing for high power dissipation. The device is characterized for operation over the free-air temperature range of –55°C to 125°C.