Startseite Energiemanagement AC/DC- und DC/DC-Controller (externer FET)
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TPS7H5020-SP

AKTIV

Strahlungsfester QMLP-PWM-Controller mit 100% Tastverhältnis zum Antreiben von MOSFETs oder GaN-FETs

Produktdetails

Rating Space Topology Boost, Flyback Vin (max) (V) 14 Vin (min) (V) 4.5 Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Operating temperature range (°C) -55 to 125 Duty cycle (max) (%) 100
Rating Space Topology Boost, Flyback Vin (max) (V) 14 Vin (min) (V) 4.5 Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Operating temperature range (°C) -55 to 125 Duty cycle (max) (%) 100
HTSSOP (PWP) 24 49.92 mm² 7.8 x 6.4
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 4.5V to 14V input voltage range for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 4.5V to 14V input voltage range for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595

The TPS7H502x is a radiation-hardened, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controller also features a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The device is capable of switching at frequencies up to 1MHz. The driver stage for the controller has a wide input voltage range from 4.5V to 14V and supports peak source and sink currents up to 1.2A. The programmable regulator, VLDO, can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 device has a maximum duty cycle of 100% while the TPS7H5021 has a 50% maximum duty cycle. The controller supports numerous power converter topologies, including flyback, forward, and boost.

The TPS7H502x is a radiation-hardened, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controller also features a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The device is capable of switching at frequencies up to 1MHz. The driver stage for the controller has a wide input voltage range from 4.5V to 14V and supports peak source and sink currents up to 1.2A. The programmable regulator, VLDO, can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 device has a maximum duty cycle of 100% while the TPS7H5021 has a 50% maximum duty cycle. The controller supports numerous power converter topologies, including flyback, forward, and boost.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver datasheet (Rev. A) PDF | HTML 15 Sep 2025
* Radiation & reliability report TPS7H5020-SP QMLP Total Ionizing Dose (TID) Report 03 Sep 2025
* Radiation & reliability report TPS7H5020-SEP and TPS7H5020-SP QMLP Neutron Displacement Damage (NDD) Characterization 02 Sep 2025
* Radiation & reliability report Single-Event Effects (SEE) Radiation Report of the TPS7H502X-SP PDF | HTML 18 Aug 2025
Selection guide TI Space Products (Rev. K) 04 Apr 2025

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

TPS7H5020EVM — TPS7H5020-SP – Evaluierungsmodul

Das TPS7H5020EVM demonstriert den Betrieb eines einzelnen TPS7H5020-SP-Strommodus-PWM-Controllers mit integriertem Gate-Treiber zusammen mit einem GaN-FET in einer Aufwärtskonfiguration. Einige Footprints der Platine können mit zusätzlichen Komponenten und Prüfpunkten bestückt werden, um das (...)
Benutzerhandbuch: PDF | HTML
Evaluierungsplatine

TPS7H5020FLYEVM — Evaluierungsmodul für TPS7H5020-SEP und QMLP-Flyback

Das TPS7H5020FLYEVM demonstriert den Betrieb eines TPS7H5020-SEP PWM-Controllers, der ein GaN-FET-Schaltelement in einer Flyback-Wandlertopologie ansteuert. Das EVM bietet Flexibilität zum Testen benutzerdefinierter Konfigurationen. Testpunkte und zusätzliche Footprints für Komponenten erleichtern (...)

Benutzerhandbuch: PDF | HTML
Simulationsmodell

TPS7H502X SIMPLIS Model

SLVMEC6.ZIP (25 KB) - SIMPLIS Model
Simulationsmodell

TPS7H502x PSpice Transient Model

SLVMEE9.ZIP (41 KB) - PSpice Model
Referenzdesigns

PMP23598 — Referenzdesign für synchronen 75-W-Durchflusswandler für Raumfahrtanwendungen

Dieses Referenzdesign verwendet einen strahlungstoleranten TPS7H5020-SEP-Pulsweitenmodulations-(Pulse-Width Modulation, PWM)-Controller und einen strahlungstoleranten TPS7H6005-SEP 200-V-GaN-Halbbrücken-Gate-Treiber, um eine hocheffiziente synchrone Forward-Topologie zu schaffen. Um eine genaue, (...)
Test report: PDF
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
HTSSOP (PWP) 24 Ultra Librarian

Bestellen & Qualität

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  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
  • Werksstandort
  • Montagestandort

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