Startseite Energiemanagement Gate-Treiber Halbbrückentreiber
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TPS7H6003-SP

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Strahlungsfester 200-V-QMLV-Halbbrücken-GaN-Gate-Treiber

Produktdetails

Bootstrap supply voltage (max) (V) 200 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 200 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
CFP (HBX) 48 141.9552 mm² 16.74 x 8.48
  • Radiation Performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching
  • Radiation Performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching

The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating). The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x3-SP drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x3-SP drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.

The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating). The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x3-SP drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x3-SP drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers datasheet (Rev. C) PDF | HTML 17 Apr 2024
* SMD TPS7H6003-SP SMD 5962-22201 21 Dez 2023
* Radiation & reliability report TPS7H6003-SP Neutron Displacement Damage (NDD) Characterization Report PDF | HTML 30 Nov 2023
* Radiation & reliability report TPS7H6003-SP Total Ionizing Dose (TID) Radiation Report PDF | HTML 30 Nov 2023
* Radiation & reliability report TPS7H6003-SP Single-Event Effects (SEE) Report PDF | HTML 10 Nov 2023
EVM User's guide TPS7H6003EVM-CVAL Evaluation Module User's Guide (Rev. A) PDF | HTML 20 Feb 2024
Technical article How can you optimize SWaP for next-generation satellites with electronic power systems? PDF | HTML 02 Jan 2024
More literature TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. A) 31 Aug 2023
Application note QML flow, its importance, and obtaining lot information (Rev. C) 30 Aug 2023
Certificate TPS7H6003EVM-CVAL EU Declaration of Conformity (DoC) 29 Jun 2023
Application note Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. A) PDF | HTML 17 Nov 2022
Application note Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 19 Okt 2022
Selection guide TI Space Products (Rev. I) 03 Mär 2022
Application note DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 21 Aug 2020
Application note Hermetic Package Reflow Profiles, Termination Finishes, and Lead Trim and Form PDF | HTML 18 Mai 2020
E-book Radiation Handbook for Electronics (Rev. A) 21 Mai 2019

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

TPS7H6003EVM-CVAL — TPS7H6003-Evaluierungsmodul für GaN-FET-Halbbrückentreiber mit 200 V, 1,5 A und 3 A.

Das Evaluierungsmodul TPS7H6003 akzeptiert bis zu einen Eingang von 150 V und ermöglicht das Testen der Zuverlässigkeit des TPS7H6003-SP durch Ansteuern des Bausteins EPC2307. Standardmäßig ist das Evaluierungsmodul so eingestellt, dass es zusammen mit dem TPS7H6003-SP-Baustein im PWM-Modus läuft, (...)

Benutzerhandbuch: PDF | HTML
Simulationsmodell

TPS7H60x3-SP PSpice Transient Model

SNOM790.ZIP (46 KB) - PSpice Model
Simulationsmodell

TPS7H60x3-SP SIMPLIS Model

SNOM781.ZIP (22 KB) - SIMPLIS Model
Simulationstool

PSPICE-FOR-TI — PSpice® für TI Design-und Simulationstool

PSpice® für TI ist eine Design- und Simulationsumgebung, welche Sie dabei unterstützt, die Funktionalität analoger Schaltungen zu evaluieren. Diese voll ausgestattete Design- und Simulationssuite verwendet eine analoge Analyse-Engine von Cadence®. PSpice für TI ist kostenlos erhältlich und (...)
Referenzdesigns

PMP23200 — Referenzdesign für hart geschalteten Vollbrückenwandler mit 100 W, 5 V-Ausgang, für 100 kRad-Anwendu

Dieses Referenzdesign verwendet den TPS7H5001-SP-Pulsweitenmodulations-Controller (PWM) und drei TPS7H6003-SP-Halbbrückentreiber, um einen hart geschalteten Vollbrückenwandler zu konstruieren, der einen Eingang im Bereich von 22 V bis 36 V annimmt und einen isolierten 5-V-Ausgang erzeugt geeignet (...)
Test report: PDF
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Bestellen & Qualität

Beinhaltete Information:
  • RoHS
  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
  • Werksstandort
  • Montagestandort

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