The THS7530 device is fabricated using Texas
Instruments state-of-the-art BiCom III SiGe complementary bipolar process. The
THS7530 device is a DC-coupled, wide
bandwidth amplifier with voltage-controlled gain. The amplifier has high-impedance
differential inputs and low-impedance differential outputs with high-bandwidth gain
control, output common-mode control, and output voltage clamping.
Signal-channel performance is
exceptional with 300-MHz bandwidth, and third harmonic
distortion of –61 dBc at 32 MHz with 1-VPP output into 400 Ω.
Gain control is linear in dB with 0 V
to 0.9 V varying the gain from 11.6 dB to 46.5 dB with 38.8-dB/V gain slope.
Output voltage limiting is provided to
limit the output voltage swing and to prevent saturating following stages.
The device is characterized for
operation over the industrial temperature range, –40°C to +85°C.
The THS7530 device is fabricated using Texas
Instruments state-of-the-art BiCom III SiGe complementary bipolar process. The
THS7530 device is a DC-coupled, wide
bandwidth amplifier with voltage-controlled gain. The amplifier has high-impedance
differential inputs and low-impedance differential outputs with high-bandwidth gain
control, output common-mode control, and output voltage clamping.
Signal-channel performance is
exceptional with 300-MHz bandwidth, and third harmonic
distortion of –61 dBc at 32 MHz with 1-VPP output into 400 Ω.
Gain control is linear in dB with 0 V
to 0.9 V varying the gain from 11.6 dB to 46.5 dB with 38.8-dB/V gain slope.
Output voltage limiting is provided to
limit the output voltage swing and to prevent saturating following stages.
The device is characterized for
operation over the industrial temperature range, –40°C to +85°C.