TPSI2240-Q1
Interruptor automotriz aislado de 50 mA, 1200 V con aislación reforzada y protección contra avalanch
TPSI2240-Q1
- Qualified for automotive applications
- AEC-Q100 grade 1: –40 to 125°C TA
- Low EMI:
- Meets CISPR25 class 5 performance with no additional components
- Integrated avalanche rated MOSFETs
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- TPSI2240-Q1 IAVA = 1mA for 60s pulses
-
TPSI2240C-Q1 IAVA = 0.6mA for 60s pulses
- TPSI2240T-Q1 IAVA = 3mA for 60s pulses
- 1200V standoff voltage
- RON = 130Ω (TJ = 25°C)
- TON, TOFF < 700µs
- IOFF = 1.22µA at 1000V (TJ = 105°C)
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- Low primary side supply current
- 3.5µA OFF state current (TJ = 25°C)
- Functional Safety Capable
- Documentation available to aid in ISO 26262 and IEC 61508 system design
- Robust isolation barrier:
- > 30 year projected lifetime at 1500VRMS / 2120VDC working voltage
- Reinforced Isolation rating, VISO, up to 4750VRMS
- SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
- Creepage and clearance ≥ 8mm (primary-secondary)
- Creepage and clearance ≥ 6mm (across switch terminals)
- Safety-related certifications
- (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
- (Planned) UL 1577 component recognition program
The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TIs high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.
The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, the VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.
The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFETs avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (0.6mA for TPSI2240C-Q1 and 3mA for TPSI2240T-Q1) without requiring any external components.
Documentación técnica
| Documentación principal | Tipo | Título | Opciones de formato | Fecha |
|---|---|---|---|---|
| * | Data sheet | TPSI2240-Q1 1200V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection datasheet (Rev. A) | PDF | HTML | 12 dic 2025 |
| Application note | Design of Insulation Monitoring Device (IMD) in On-board Charger System With Active Single-Switch Architecture | PDF | HTML | 30 ene 2026 | |
| Functional safety information | TPSI2240-Q1, TPSI2240C-Q1, and TPSI2240T-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. A) | PDF | HTML | 26 ene 2026 | |
| Application note | Design Considerations for Large Y-Capacitor Resistive-Bridge DC Insulation Monitoring Device | PDF | HTML | 15 ene 2026 | |
| Certificate | TPSI2240Q1EVM EU Declaration of Conformity (DoC) | 01 jul 2025 |
Diseño y desarrollo
Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.
TPSI2240Q1EVM — Módulo de evaluación TPSI2240-Q1
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| Encapsulado | Pines | Símbolos CAD, huellas y modelos 3D |
|---|---|---|
| SOIC (DWQ) | 11 | Ultra Librarian |
Pedidos y calidad
- RoHS
- REACH
- Marcado del dispositivo
- Acabado de plomo/material de la bola
- Clasificación de nivel de sensibilidad a la humedad (MSL)/reflujo máximo
- Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
- Contenido del material
- Resumen de calificaciones
- Monitoreo continuo de confiabilidad
- Lugar de fabricación
- Lugar de ensamblaje
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