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TXS02324

ACTIVO

Multiplexor/conversor de alimentación doble 2:1, tarjeta SIM con LDO de ranura doble dedicado

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TXS02324

ACTIVO
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Detalles del producto

Bits (#) 6 Data rate (max) (Mbps) 10 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.7 Vin (max) (V) 3.3 Vout (min) (V) 1.36 Vout (max) (V) 3.3 Applications SIM Card Features Dual LDO, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.005 Rating Catalog Operating temperature range (°C) -40 to 85
Bits (#) 6 Data rate (max) (Mbps) 10 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.7 Vin (max) (V) 3.3 Vout (min) (V) 1.36 Vout (max) (V) 3.3 Applications SIM Card Features Dual LDO, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.005 Rating Catalog Operating temperature range (°C) -40 to 85
WQFN (RUK) 20 9 mm² (3 mm × 3 mm)
  • Level Translator
    • VDDIO Range of 1.7 V to 3.3 V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through I2C Interface With Baseband Processor
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • Package
    • 20-Pin QFN (3 mm × 3 mm)
  • Level Translator
    • VDDIO Range of 1.7 V to 3.3 V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through I2C Interface With Baseband Processor
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • Package
    • 20-Pin QFN (3 mm × 3 mm)

The TXS02324 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to be able to support two SIMs/UICCs.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces, an integrated "fast-mode" 400 kb/s "slave" I2C control register interface for configuration purposes, a 32-kHz clock input for internal timing generation.

The voltage-level translator has two supply voltage pins. VDDIO sets the reference for the baseband interface and can be operated from 1.7 V to 3.3 V. VSIM1 and VSIM2 are programmed to either 1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.

The TXS02324 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to be able to support two SIMs/UICCs.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces, an integrated "fast-mode" 400 kb/s "slave" I2C control register interface for configuration purposes, a 32-kHz clock input for internal timing generation.

The voltage-level translator has two supply voltage pins. VDDIO sets the reference for the baseband interface and can be operated from 1.7 V to 3.3 V. VSIM1 and VSIM2 are programmed to either 1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.
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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos Dual-Supply 2:1 SIM Card Multiplexer/Translator With Slot Dedicated Dual LDO datasheet 9/02/2011
Nota sobre la aplicación Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 12/07/2024
Nota sobre la aplicación Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 3/07/2024
Guía de selección Voltage Translation Buying Guide (Rev. A) 15/04/2021

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