LF442QML

生産中止品

デュアル低消費電力 JFET 入力オペアンプ

製品詳細

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 6 Rail-to-rail No GBW (typ) (MHz) 1 Slew rate (typ) (V/µs) 1 Vos (offset voltage at 25°C) (max) (mV) 5 Iq per channel (typ) (mA) 0.2 Vn at 1 kHz (typ) (nV√Hz) 35 Rating Military Operating temperature range (°C) to Offset drift (typ) (µV/°C) 7 CMRR (typ) (dB) 95 Iout (typ) (A) 0.0068 Architecture FET
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 6 Rail-to-rail No GBW (typ) (MHz) 1 Slew rate (typ) (V/µs) 1 Vos (offset voltage at 25°C) (max) (mV) 5 Iq per channel (typ) (mA) 0.2 Vn at 1 kHz (typ) (nV√Hz) 35 Rating Military Operating temperature range (°C) to Offset drift (typ) (µV/°C) 7 CMRR (typ) (dB) 95 Iout (typ) (A) 0.0068 Architecture FET
TO-CAN (LMC) 8 80.2816 mm² 8.96 x 8.96
  • 1/10 Supply Current of a LM1458: 400 μA (Max)
  • Low Input Bias Current: 50 pA (Typ)
  • Low Input Offset Voltage: 1 mV (Typ)
  • Low Input Offset Voltage Drift: 7 μV/°C (Typ)
  • High Gain Bandwidth: 1 MHz (Typ)
  • High Slew Rate: 1 V/μs (Typ)
  • Low Noise Voltage for Low Power: 35 nV/√Hz (Typ)
  • Low Input Noise Current: 0.01 pA/√Hz (Typ)
  • High Input Impedance: 1012Ω

All trademarks are the property of their respective owners.

  • 1/10 Supply Current of a LM1458: 400 μA (Max)
  • Low Input Bias Current: 50 pA (Typ)
  • Low Input Offset Voltage: 1 mV (Typ)
  • Low Input Offset Voltage Drift: 7 μV/°C (Typ)
  • High Gain Bandwidth: 1 MHz (Typ)
  • High Slew Rate: 1 V/μs (Typ)
  • Low Noise Voltage for Low Power: 35 nV/√Hz (Typ)
  • Low Input Noise Current: 0.01 pA/√Hz (Typ)
  • High Input Impedance: 1012Ω

All trademarks are the property of their respective owners.

The LF442 dual low power operational amplifier provides many of the same AC characteristics as the industry standard LM1458 while greatly improving the DC characteristics of the LM1458. The amplifier has the same bandwidth, slew rate, and gain (10 kΩ load) as the LM1458 and only draws one tenth the supply current of the LM1458. In addition the well matched high voltage JFET input devices of the LF442 reduce the input bias and offset currents by a factor of 10,000 over the LM1458. A combination of careful layout design and internal trimming ensures very low input offset voltage and voltage drift. The LF442 also has a very low equivalent input noise voltage for a low power amplifier.

The LF442 is pin compatible with the LM1458 allowing an immediate 10 times reduction in power drain in many applications. The LF442 should be used where low power dissipation and good electrical characteristics are the major considerations.

The LF442 dual low power operational amplifier provides many of the same AC characteristics as the industry standard LM1458 while greatly improving the DC characteristics of the LM1458. The amplifier has the same bandwidth, slew rate, and gain (10 kΩ load) as the LM1458 and only draws one tenth the supply current of the LM1458. In addition the well matched high voltage JFET input devices of the LF442 reduce the input bias and offset currents by a factor of 10,000 over the LM1458. A combination of careful layout design and internal trimming ensures very low input offset voltage and voltage drift. The LF442 also has a very low equivalent input noise voltage for a low power amplifier.

The LF442 is pin compatible with the LM1458 allowing an immediate 10 times reduction in power drain in many applications. The LF442 should be used where low power dissipation and good electrical characteristics are the major considerations.

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* データシート LF442QML Dual Low Power JFET Input Operational Amplifier データシート (Rev. A) 2013年 3月 26日

購入と品質

記載されている情報:
  • RoHS
  • REACH
  • デバイスのマーキング
  • リード端子の仕上げ / ボールの原材料
  • MSL 定格 / ピーク リフロー
  • MTBF/FIT 推定値
  • 使用原材料
  • 認定試験結果
  • 継続的な信頼性モニタ試験結果
記載されている情報:
  • ファブの拠点
  • 組み立てを実施した拠点