AFE10004-EP

활성

출력 스위치가 통합된 향상된 제품, 4채널 전원 증폭기 모니터 및 컨트롤러

제품 상세 정보

Number of DAC channels 4 DAC resolution (bps) 13 Temperature sensing Local, Remote Interface type I2C, SPI Features Built-in sequencing control, EEPROM, High current drive capability Operating temperature range (°C) -55 to 125 Rating HiRel Enhanced Product DAC output full-scale (min) (V) -10 DAC output full-scale (max) (V) 10
Number of DAC channels 4 DAC resolution (bps) 13 Temperature sensing Local, Remote Interface type I2C, SPI Features Built-in sequencing control, EEPROM, High current drive capability Operating temperature range (°C) -55 to 125 Rating HiRel Enhanced Product DAC output full-scale (min) (V) -10 DAC output full-scale (max) (V) 10
VQFN (RGE) 24 16 mm² 4 x 4
  • Specified for defense and aerospace applications
  • Controlled baseline
  • One assembly and test site
  • One fabrication site
  • Product traceability
  • Extended product life cycle
  • Local and remote diode temperature sensor
    • ±2.5°C error, maximum
    • 0.0625°C resolution
  • Internal EEPROM for autonomous operation
    • Storage for four independent transfer functions
    • Device configuration storage
    • Open space for user storage
    • Qualified for 15-year retention
  • Four analog outputs
    • Four monotonic DACs: 1.22mV resolution
    • Automatically configured output ranges:
      • Positive output voltage: 5.5V, maximum
      • Negative output voltage: –10V, minimum
    • High current drive capability:
      • Source up to 100mA
      • Sink up to 20mA
    • High capacitive load tolerant: up to 15µF
  • Gate bias on and off control switches
    • Two programmable off voltages
      • Two auxiliary DACs: 1.22mV resolution
    • Fast switching time: 50ns, typical
    • Low resistance: 3Ω, maximum
  • Built-in sequencing control
  • Internal 2.5V reference
  • SPI and I2C interfaces: 1.7V to 3.6V operation
    • SPI: 4-wire Interface
    • I2C: Eight selectable peripheral addresses
  • Specified temperature range: –55°C to +125°C
  • Specified for defense and aerospace applications
  • Controlled baseline
  • One assembly and test site
  • One fabrication site
  • Product traceability
  • Extended product life cycle
  • Local and remote diode temperature sensor
    • ±2.5°C error, maximum
    • 0.0625°C resolution
  • Internal EEPROM for autonomous operation
    • Storage for four independent transfer functions
    • Device configuration storage
    • Open space for user storage
    • Qualified for 15-year retention
  • Four analog outputs
    • Four monotonic DACs: 1.22mV resolution
    • Automatically configured output ranges:
      • Positive output voltage: 5.5V, maximum
      • Negative output voltage: –10V, minimum
    • High current drive capability:
      • Source up to 100mA
      • Sink up to 20mA
    • High capacitive load tolerant: up to 15µF
  • Gate bias on and off control switches
    • Two programmable off voltages
      • Two auxiliary DACs: 1.22mV resolution
    • Fast switching time: 50ns, typical
    • Low resistance: 3Ω, maximum
  • Built-in sequencing control
  • Internal 2.5V reference
  • SPI and I2C interfaces: 1.7V to 3.6V operation
    • SPI: 4-wire Interface
    • I2C: Eight selectable peripheral addresses
  • Specified temperature range: –55°C to +125°C

The AFE10004-EP is a highly integrated, autonomous, power-amplifier (PA) precision analog front end (AFE) that includes four temperature compensation digital-to-analog converters (DACs), integrated EEPROM, and gate bias switches. The four DACs are programmed by four independent, user-defined, temperature-to-voltage transfer functions stored in the internal EEPROM. This design allows correction any temperature effects to be corrected without additional external circuitry. After start-up, the device operates without intervention from a system controller to provide a complete system for setting and compensating bias voltages in control applications.

The AFE10004-EP has four gate bias outputs that are switched on and off through dedicated control pins. The gate bias switches are designed for fast response. In combination with the device PA_ON pin, this fast response enables correct power sequencing and protection of depletion-mode transistors, such as GaAs and GaN.

The function integration and wide operating temperature range make the AFE10004-EP an excellent choice as an all-in-one, autonomous bias control circuit for the power amplifiers found in RF systems. The flexible DAC output ranges and built-in sequencing features let the device be used as a biasing controller for a large variety of transistor technologies, such as LDMOS, GaAs, and GaN.

The AFE10004-EP is a highly integrated, autonomous, power-amplifier (PA) precision analog front end (AFE) that includes four temperature compensation digital-to-analog converters (DACs), integrated EEPROM, and gate bias switches. The four DACs are programmed by four independent, user-defined, temperature-to-voltage transfer functions stored in the internal EEPROM. This design allows correction any temperature effects to be corrected without additional external circuitry. After start-up, the device operates without intervention from a system controller to provide a complete system for setting and compensating bias voltages in control applications.

The AFE10004-EP has four gate bias outputs that are switched on and off through dedicated control pins. The gate bias switches are designed for fast response. In combination with the device PA_ON pin, this fast response enables correct power sequencing and protection of depletion-mode transistors, such as GaAs and GaN.

The function integration and wide operating temperature range make the AFE10004-EP an excellent choice as an all-in-one, autonomous bias control circuit for the power amplifiers found in RF systems. The flexible DAC output ranges and built-in sequencing features let the device be used as a biasing controller for a large variety of transistor technologies, such as LDMOS, GaAs, and GaN.

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기술 자료

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2개 모두 보기
유형 직함 날짜
* Data sheet AFE10004-EP 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches datasheet (Rev. A) PDF | HTML 2025/12/03
* Radiation & reliability report AFE10004-EP Enhanced Product Qualification and Reliability Report (Rev. B) PDF | HTML 2025/11/07

설계 및 개발

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주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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