LMG1020-Q1
- Qualified for automotive applications
- AEC-Q100 qualified
- Device temperature grade 1
- Low-side, ultra-fast gate driver for GaN and silicon FETs
- 1ns minimum input pulse width
- Up to 60MHz operation
- 2.5ns typical, 4.5ns maximum propagation delay
- 400ps typical rise and fall time
- 7A peak source and 5A peak sink currents
- 5V supply voltage
- UVLO and overtemperature protection
- 0.8mm × 1.2mm WCSP package
The LMG1020-Q1 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low-side. The design simplicity of the LMG1020-Q1 enables extremely fast propagation delays of 2.5 ns and minimum pulse width of 1ns. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.
The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.
The 0.8mm × 1.2mm WCSP package of the LMG1020-Q1 minimizes gate loop inductance and maximizes power density in high-frequency applications.
기술 자료
| 상위 문서 | 유형 | 직함 | 형식 옵션 | 최신 영어 버전 다운로드 | 날짜 |
|---|---|---|---|---|---|
| * | 데이터 시트 | LMG1020-Q1 5V, 7A, 5A Low-Side GaN and MOSFET Driver For 1ns Pulse Width Automotive Applications datasheet | PDF | HTML | 2025. 4. 29 |
설계 및 개발
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LMG1020EVM-006 — LMG1020 GaN 저압측 드라이버 + GaN FET LiDAR 평가 모듈
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| DSBGA (YBV) | 6 | Ultra Librarian |