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LM5104

現行

具 8-V UVLO 和自適性延遲的 2-A、100-V 半橋式閘極驅動器

產品詳細資料

Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 1.8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Single
Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 1.8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.035 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Single
WSON (DPR) 10 16 mm² (4 mm × 4 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • Adaptive Rising and Falling Edges With Programmable
    Additional Delay
  • Single Input Control
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Fast Turnoff Propagation Delay (25 ns Typical)
  • Drives 1000-pF Loads With 15-ns Rise and Fall Times
  • Supply Rail Undervoltage Lockout
  • SOIC and WSON-10 4-mm × 4-mm Package
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • Adaptive Rising and Falling Edges With Programmable
    Additional Delay
  • Single Input Control
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Fast Turnoff Propagation Delay (25 ns Typical)
  • Drives 1000-pF Loads With 15-ns Rise and Fall Times
  • Supply Rail Undervoltage Lockout
  • SOIC and WSON-10 4-mm × 4-mm Package

The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.

The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.

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技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LM5104 High-Voltage Half-Bridge Gate Driver With Adaptive Delay datasheet (Rev. D) PDF | HTML 2014/12/16
應用說明 Benefits and Use of Single Input Gate Drivers with Programmable Dead Time PDF | HTML 2025/4/23
應用說明 Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024/3/25
應用說明 Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 2024/1/24
應用說明 Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023/9/8
應用說明 Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022/2/17
應用說明 Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 2021/4/7
應用說明 Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020/5/12
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019/10/22
應用說明 Maximizing DC/DC converter designs with UCC27282 2019/1/18
應用說明 UCC27282 Improving motor drive system robustness 2019/1/11
更多文件說明 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018/10/29

設計與開發

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模擬型號

LM5104 PSpice Transient Model (Rev. A)

SNVM164A.ZIP (49 KB) - PSpice 模型
支援產品和硬體
模擬型號

LM5104 TINA-TI Transient Reference Design

SNVM339.TSC (536 KB) - TINA-TI 參考設計
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模擬型號

LM5104 TINA-TI Transient Spice Model

SNVM340.ZIP (10 KB) - TINA-TI Spice 模型
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模擬型號

LM5104 Unencrypted PSpice Transient Model

SNVMAC6.ZIP (2 KB) - PSpice 模型
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計算工具

SNVR521 — LM51xx Schematic Review Template

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
WSON (DPR) 10 Ultra Librarian
SOIC (D) 8 Ultra Librarian

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