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LM5109

現行

100V / 1A 峰值半橋接閘極驅動器

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LM2101 現行 具有 8-V UVLO 的 107-V、0.5-A/0.8-A 半橋閘極驅動器 Newer device with similar electrical characteristics

產品詳細資料

Power switch MOSFET Operating temperature range (°C) to Undervoltage lockout (typ) (V) 8 Rating Catalog
Power switch MOSFET Operating temperature range (°C) to Undervoltage lockout (typ) (V) 8 Rating Catalog
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Drives both a high side and low side N-Channel MOSFET
  • 1A peak output current (1.0A sink / 1.0A source)
  • Independent TTL compatible inputs
  • Bootstrap supply voltage to 118V DC
  • Fast propagation times (27 ns typical)
  • Drives 1000 pF load with 15ns rise and fall times
  • Excellent propagation delay matching (2 ns typical)
  • Supply rail under-voltage lockout
  • Low power consumption
  • Pin compatible with ISL6700

  • Drives both a high side and low side N-Channel MOSFET
  • 1A peak output current (1.0A sink / 1.0A source)
  • Independent TTL compatible inputs
  • Bootstrap supply voltage to 118V DC
  • Fast propagation times (27 ns typical)
  • Drives 1000 pF load with 15ns rise and fall times
  • Excellent propagation delay matching (2 ns typical)
  • Supply rail under-voltage lockout
  • Low power consumption
  • Pin compatible with ISL6700

The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.


The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.


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具備升級功能,可直接投入使用替代所比較的裝置。
LM5109B 現行 具 8-V UVLO 和高雜訊抗擾度的 1-A、100-V 半橋閘極驅動器 Newer version with the same electrical characteristics

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LM5109 100V / 1A Peak Half Bridge Gate Driver datasheet 2005/4/26
應用說明 Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024/3/25
應用說明 Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023/9/8
應用說明 Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022/2/17
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
白皮書 Power Electronics in Motor Drives: Where is it? (Rev. A) 2019/10/1
更多文件說明 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018/10/29

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SOIC (D) 8 Ultra Librarian

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