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半橋式驅動器

LM5109B

現行

具 8-V UVLO 和高雜訊抗擾度的 1-A、100-V 半橋閘極驅動器

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LM2101 現行 具有 8-V UVLO 的 107-V、0.5-A/0.8-A 半橋閘極驅動器 Newer device with similar electrical characteristics

LM5109B

現行
產品規格表 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 90 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.025 Rise time (ns) 15 Fall time (ns) 15 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Independent
Bootstrap supply voltage (max) (V) 90 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.025 Rise time (ns) 15 Fall time (ns) 15 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Independent
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) WSON (NGT) 8 16 mm² (4 mm × 4 mm)
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source)
  • Inputs Compatible With Independent TTL and CMOS
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load With 15-ns Rise and Fall Times
  • Excellent Propagation Delay Matching (2 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • 8-Pin SOIC and Thermally-Enhanced 8-Pin WSON Package
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source)
  • Inputs Compatible With Independent TTL and CMOS
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load With 15-ns Rise and Fall Times
  • Excellent Propagation Delay Matching (2 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • 8-Pin SOIC and Thermally-Enhanced 8-Pin WSON Package

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.
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技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver datasheet (Rev. C) PDF | HTML 2015/10/15
應用說明 Applying Non-isolated Gate Drivers in Your Home Tool and Accessory Designs PDF | HTML 2025/5/16
應用說明 Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024/3/25
應用說明 Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 2024/1/24
應用說明 Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023/9/8
應用說明 Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022/2/17
應用說明 Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 2021/4/7
應用說明 Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020/5/12
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019/10/22
應用說明 Maximizing DC/DC converter designs with UCC27282 2019/1/18
應用說明 UCC27282 Improving motor drive system robustness 2019/1/11
更多文件說明 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018/10/29
技術文章 How to achieve higher system robustness in DC drives, part 3: minimum input pulse PDF | HTML 2018/9/19
技術文章 How to achieve higher system robustness in DC drives, part 2: interlock and deadti PDF | HTML 2018/5/30
應用說明 AN-1317 Selection of External Bootstrap Diode for LM510X Devices (Rev. B) 2018/5/4
技術文章 The story of motor-drive integration PDF | HTML 2017/1/9

設計與開發

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開發板

LM2105EVM — 具有整合式自舉二極體且適用於 105-V 半橋驅動器的 LM2105 評估模組

LM2105 評估模組 (EVM) 是用於評估 LM2105 性能的平台。LM2105 是一款具有 0.5-A 峰值源極和 0.8-A 汲極電流的 105-V、開機電壓、高壓側、低壓側驅動器，適用於驅動兩個 N 通道金屬氧化半導體場效電晶體 (MOSFET)。相同的電路板可用於評估支援封裝中的針腳對針腳相容零件。

使用指南: PDF | HTML
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模擬型號

LM5109B PSpice Transient Model

SNVMAM7.ZIP (75 KB) - PSpice 模型
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模擬型號

LM5109B Unencrypted PSpice Transient Model

SNVMAM8.ZIP (3 KB) - PSpice 模型
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計算工具

SNVR521 — LM51xx Schematic Review Template

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參考設計

TIDM-DC-DC-BUCK — 數位控制非隔離式 DC/DC 降壓轉換器參考設計

此設計旨在示範使用 C2000™ 微控制器的數位電源控制，並評估 powerSUITE 數位電源軟體工具。此設計由兩個獨立的電路板組成：

此設計的軟體封裝在適用於 C2000 MCU 的 DigitalPower 軟體開發套件 (SDK) 中。

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (D) 8 Ultra Librarian
WSON (NGT) 8 Ultra Librarian
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