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LMG3104R017

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具有強化整合式驅動器和防護功能的 100V 1.7mΩ GaN FET

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LMG3104R017

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產品詳細資料

Rating Catalog Operating temperature range (°C) to
Rating Catalog Operating temperature range (°C) to
VQFN-FCRLF (VBE) 15 26 mm² (6.5 mm × 4 mm)
  • 100V GaN power stage with integrated driver: (GaN FET RDS(ON) options: 1.1mΩ and 1.7mΩ)
  • Integrated high-side level shift and bootstrap
    • Two LMG310xR0xx can form a half-bridge
    • No external level shifter is required
  • Efficient and high-density power conversion with
    • Ultra-low propagation delay (20ns) and matching (7ns)
    • Independent turn-on and turn-off slew-rate control for the GaN FET
    • Zero-voltage detection (ZVD) reporting for dead-time optimization
    • Ideal diode mode turn-on (IDM) and turn-off (zero current detection ZCD) to reduce third quadrant losses in soft switching application
  • Input control flexibility
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead time option for IO-limited controllers
  • Robust protection
    • Interlock protection in IIM (LMG3104R0xx)
    • Internal bootstrap supply voltage regulation to prevent GaN FET overdrive
    • VDS monitoring based cycle-by-cycle short-circuit protection
    • Fault indication for overtemperature, supply undervoltage, and short-circuit events
  • External bias power supply: 5V
    • Supports 3.3V and 5V input logic levels
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling
  • 100V GaN power stage with integrated driver: (GaN FET RDS(ON) options: 1.1mΩ and 1.7mΩ)
  • Integrated high-side level shift and bootstrap
    • Two LMG310xR0xx can form a half-bridge
    • No external level shifter is required
  • Efficient and high-density power conversion with
    • Ultra-low propagation delay (20ns) and matching (7ns)
    • Independent turn-on and turn-off slew-rate control for the GaN FET
    • Zero-voltage detection (ZVD) reporting for dead-time optimization
    • Ideal diode mode turn-on (IDM) and turn-off (zero current detection ZCD) to reduce third quadrant losses in soft switching application
  • Input control flexibility
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead time option for IO-limited controllers
  • Robust protection
    • Interlock protection in IIM (LMG3104R0xx)
    • Internal bootstrap supply voltage regulation to prevent GaN FET overdrive
    • VDS monitoring based cycle-by-cycle short-circuit protection
    • Fault indication for overtemperature, supply undervoltage, and short-circuit events
  • External bias power supply: 5V
    • Supports 3.3V and 5V input logic levels
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling

The LMG310xR0xx devices are a family of 100V enhancement-mode Gallium Nitride (GaN) HEMT with integrated high frequency driver. The LMG310xR0xx incorporates a high side level shifter and bootstrap circuit, so that two LMG310xR0xx devices can be used to form a half bridge without an additional level shifter. LMG3104R0xx offers logic input interlock in Independent Input Mode (IIM).

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery, very small input capacitance CISS, and output capacitance COSS. The driver and the GaN FET are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG310xR0xx device is available in a 6.5mm × 4mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the VCC voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.

The LMG310xR0xx devices are a family of 100V enhancement-mode Gallium Nitride (GaN) HEMT with integrated high frequency driver. The LMG310xR0xx incorporates a high side level shifter and bootstrap circuit, so that two LMG310xR0xx devices can be used to form a half bridge without an additional level shifter. LMG3104R0xx offers logic input interlock in Independent Input Mode (IIM).

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery, very small input capacitance CISS, and output capacitance COSS. The driver and the GaN FET are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG310xR0xx device is available in a 6.5mm × 4mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the VCC voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.
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* 資料表 LMG310xR0xx 100V GaN Power Stage With Integrated Protection and Smart-Switching Features datasheet PDF | HTML 2026/5/21

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LMG210XEVM-121 — LMG2104R044 評估模組

LMG210XR044 評估模組是一款小巧易用的功率級，且具有外部 PWM 訊號。此電路板可配置為降壓轉換器、升壓轉換器或另一個使用半橋的轉換器拓撲。本裝置可用於評估 LMG210XR044 作為硬切換轉換器的性能，藉以測量效率、切換速度與 dv/dt (電壓轉換速率) 等參數。此 EVM採用 LMG210XR044 半橋電源模組，並具有兩個由 80V GaN FET 半橋閘極驅動器驅動的 100V 4.4mΩ GaN FET。請勿用於評估暫態響應，因為此為具有外部 PWM 訊號的開環電路板。此 EVM 安裝在 LMG2104R044 裝置上。
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開發板

LMG210XEVM-143 — LMG2104R022 評估模組

LMG210XR022 評估模組 (EVM) 是一款小巧易用的功率級，且具有外部 PWM 訊號。此電路板可配置為降壓轉換器、升壓轉換器或另一個使用半橋的轉換器拓撲結構。本 EVM 可用於評估 LMG210XR022 作為硬切換轉換器的性能，藉以對效率、切換速度與 dv/dt（電壓轉換速率）等測量參數進行取樣。此 EVM採用 LMG210XR022 半橋電源模組，並具有兩個由 80V GaN FET 半橋閘極驅動器驅動的 100V 2.2mΩ GaN FET。請勿用於評估暫態響應，因為此為具有外部 PWM 訊號的開環電路板。此 EVM 安裝在 LMG2104R022 裝置上。
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開發板

LMG3100EVM-089 — LMG3100 評估模組

LMG3100 評估模組 (EVM) 是一款小巧易用的功率級，且具有外部 PWM 訊號。此電路板可配置為降壓轉換器、升壓轉換器或其它使用半橋的轉換器拓撲。此 EVM 配備兩個 LMG3100 電源模組，每個模組均配備一個具有整合式驅動器的 100V 1.7mΩ GaN FET。
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VQFN-FCRLF (VBE) 15 Ultra Librarian
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