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氮化鎵 (GaN) 功率級

LMG3614

現行

具有整合式驅動器和防護功能的 650-V 170-mΩ GaN FET

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產品規格表

LMG3614

現行
產品規格表 立即訂購

產品詳細資料

VDS (max) (V) 650 RDS(on) (mΩ) 170 ID (max) (A) 6 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 650 RDS(on) (mΩ) 170 ID (max) (A) 6 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (REQ) 38 42.4 mm² (8 mm × 5.3 mm)
  • 650V 170mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 55µA
  • Maximum supply and input logic pin voltage: 26V
  • 8mm × 5.3mm QFN package with thermal pad
  • 650V 170mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 55µA
  • Maximum supply and input logic pin voltage: 26V
  • 8mm × 5.3mm QFN package with thermal pad

The LMG3614 is a 650V 170mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3614 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8mm by 5.3mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

The LMG3614 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.

The LMG3614 is a 650V 170mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3614 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8mm by 5.3mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

The LMG3614 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LMG3614 650V 170 mΩ GaN FET With Integrated Driver datasheet PDF | HTML 2024/9/30
Product overview Designing With the LMG362x Family of Low-Power GaN FETs PDF | HTML 2023/11/28

設計與開發

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開發板

LMG3624EVM-081 — 適用於具 USB Type-C® PD 的 65-W 準諧振返馳轉換器的 LMG3624 評估模組

LMG3624EVM-081 使用具備整合電流感測模擬功能與 GaN FET 的 LMG3624，展示 65-W USB Type-C® 電力傳輸 (PD) 離線轉接器的高效率和高密度。輸入支援通用 90 Vac 至 265 Vac，單輸出在最大電流 3-A 時可設爲 5 V、9 V 和 15 V，最大電流 3.25-A 時則為 20 V，可透過 USB PD 介面控制器進行調整。高達 200-kHz 額定值的高頻運作，可實現較小的解決方案尺寸，同時多模式運作可保持高效率。輸出則採用同步整流以提升效率。

使用指南: PDF | HTML
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計算工具

LMG36XX-CALC — LMG36XX Quasi-Resonant Flyback Power Stage Design Calculator

The purpose of this tool is to aid in the design of the main power stage components of a Quasi-Resonant Flyback Converter (QR) with the use LMG36XX integrated GaN FET. Calculations are provided for frequency, voltage/current stresses, and losses in converter.
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VQFN (REQ) 38 Ultra Librarian
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