TPS7H1111-SP

現行

Radiation-hardened, QML-P and QML-V, 1.5A ultra-low-noise high-PSRR low-dropout (LDO) regulator

產品詳細資料

Rating Space Vin (max) (V) 7 Vin (min) (V) 0.85 Iout (max) (A) 1.5 Output options Adjustable Output Vout (max) (V) 5.5 Vout (min) (V) 0.4 Noise (µVrms) 1.7 PSRR at 100 KHz (dB) 71 Iq (typ) (mA) 19 Features Enable, Power good, Radiation hardened, Soft start Thermal resistance θJA (°C/W) 25.1 Load capacitance (min) (µF) 132 Regulated outputs (#) 1 Accuracy (%) 1.3 Dropout voltage (Vdo) (typ) (mV) 215 Operating temperature range (°C) -55 to 125 Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (krad) 100
Rating Space Vin (max) (V) 7 Vin (min) (V) 0.85 Iout (max) (A) 1.5 Output options Adjustable Output Vout (max) (V) 5.5 Vout (min) (V) 0.4 Noise (µVrms) 1.7 PSRR at 100 KHz (dB) 71 Iq (typ) (mA) 19 Features Enable, Power good, Radiation hardened, Soft start Thermal resistance θJA (°C/W) 25.1 Load capacitance (min) (µF) 132 Regulated outputs (#) 1 Accuracy (%) 1.3 Dropout voltage (Vdo) (typ) (mV) 215 Operating temperature range (°C) -55 to 125 Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (krad) 100
HTSSOP (PWP) 28 62.08 mm² (9.7 mm × 6.4 mm) CFP (HBL) 14 73.20624 mm² (9.12 mm × 8.027 mm)
  • Total ionizing dose (TID) characterized
    • Radiation hardness assurance (RHA) availability of 100 krad(Si) or 50 krad(Si)
  • Single-Event Effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 75 MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized up to LET = 75 MeV-cm2/mg
  • Ultra-low noise (10 Hz to 100 kHz):
    • 1.71 µVRMS (typ)
  • High power-supply rejection ratio, PSRR (typ):
    • 109 dB at 1 kHz
    • 71 dB at 100 kHz
    • 66 dB at 1 MHz
  • Input voltage range from 0.85 V to 7 V
  • Bias supply of 2.2 V to 14 V to minimize power dissipation
  • Output voltage as low as 0.4 V
  • Up to 1.5-A output current
  • Excellent output accuracy over line and load:
    • –1.3% to +1.2% across temperature
    • –0.7% to +0.9% at 25°C
  • Low-dropout: 215 mV (typ) at 1.5 A
  • Programmable soft-start control (SS_SET)
  • Open-drain power good (PG) indicator
  • Configurable power good threshold (FB_PG)
  • Exposed control loop with the external compensation STAB pin
  • Internal current limit with configurable behavior
  • Current sharing to allow operation of up to 2.9 A
  • Military temperature range (–55°C to 125°C)
  • Total ionizing dose (TID) characterized
    • Radiation hardness assurance (RHA) availability of 100 krad(Si) or 50 krad(Si)
  • Single-Event Effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 75 MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized up to LET = 75 MeV-cm2/mg
  • Ultra-low noise (10 Hz to 100 kHz):
    • 1.71 µVRMS (typ)
  • High power-supply rejection ratio, PSRR (typ):
    • 109 dB at 1 kHz
    • 71 dB at 100 kHz
    • 66 dB at 1 MHz
  • Input voltage range from 0.85 V to 7 V
  • Bias supply of 2.2 V to 14 V to minimize power dissipation
  • Output voltage as low as 0.4 V
  • Up to 1.5-A output current
  • Excellent output accuracy over line and load:
    • –1.3% to +1.2% across temperature
    • –0.7% to +0.9% at 25°C
  • Low-dropout: 215 mV (typ) at 1.5 A
  • Programmable soft-start control (SS_SET)
  • Open-drain power good (PG) indicator
  • Configurable power good threshold (FB_PG)
  • Exposed control loop with the external compensation STAB pin
  • Internal current limit with configurable behavior
  • Current sharing to allow operation of up to 2.9 A
  • Military temperature range (–55°C to 125°C)

The TPS7H1111 is an ultra-low noise, high PSRR, low dropout linear regulator (LDO) optimized for powering radio-frequency (RF) devices in a space environment. It is capable of sourcing up to 1.5 A over a 0.85-V to 7-V input range with a 2.2-V to 14-V bias supply.

The high performance of the device limits power-supply generated phase noise and clock jitter, making this device ideal for powering high-performance ADCs, DACs, VCOs, PLLs, SerDes, and other RF components in satellites. For digital loads (such as FPGAs and DSPs) requiring low voltage operation, the exceptional accuracy and excellent transient performance ensure optimal system performance.

A standard microcircuit drawing (SMD) is available for the QML variants, 5962R21203. A vendor item drawing (VID) is available for the -SEP variant, V62/23602.

The TPS7H1111 is an ultra-low noise, high PSRR, low dropout linear regulator (LDO) optimized for powering radio-frequency (RF) devices in a space environment. It is capable of sourcing up to 1.5 A over a 0.85-V to 7-V input range with a 2.2-V to 14-V bias supply.

The high performance of the device limits power-supply generated phase noise and clock jitter, making this device ideal for powering high-performance ADCs, DACs, VCOs, PLLs, SerDes, and other RF components in satellites. For digital loads (such as FPGAs and DSPs) requiring low voltage operation, the exceptional accuracy and excellent transient performance ensure optimal system performance.

A standard microcircuit drawing (SMD) is available for the QML variants, 5962R21203. A vendor item drawing (VID) is available for the -SEP variant, V62/23602.

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技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator datasheet (Rev. F) PDF | HTML 2023/12/6
* 輻射及可靠性報告 TPS7H1111-QMLP Total Ionizing Dose (TID) (Rev. A) 2026/2/18
* 輻射及可靠性報告 TPS7H1111-SP Total Ionizing Dose (TID) Radiation Report (Rev. C) PDF | HTML 2023/8/15
* 輻射及可靠性報告 TPS7H1111-SP Neutron Displacement Damage (NDD) Characterization Report (Rev. A) PDF | HTML 2023/5/30
* 輻射及可靠性報告 Single Event Effects Report of the TPS7H1111-SP 2023/1/6
* SMD TPS7H1111-SP SMD 5962-21203 2023/12/21
選擇指南 TI Space Products (Rev. L) 2026/3/27
白皮書 Demystifying LDO Turn-On (Start-Up) Time (Rev. B) PDF | HTML 2026/3/10
應用說明 Hermetic Package Reflow Profiles, Termination Finishes, and Lead Trim and Form (Rev. A) PDF | HTML 2025/11/5
白皮書 Reduce System Noise Using Parallel LDOs PDF | HTML 2025/11/3
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML 2025/6/17
應用說明 Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML 2025/6/10
更多文件說明 TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. B) 2025/2/20
技術文章 Maximizing performance with clean and low-noise power using space-grade LDOs PDF | HTML 2024/1/5
應用說明 QML flow, its importance, and obtaining lot information (Rev. C) 2023/8/30
Application brief TPS7H1111-SxP Pin Failure Mode Analysis (FMA) PDF | HTML 2023/5/2
使用指南 TPS7H1111EVM-CVAL User's Guide PDF | HTML 2023/2/2
白皮書 Parallel LDO Architecture Design Using Ballast Resistors PDF | HTML 2022/12/14
白皮書 Comprehensive Analysis and Universal Equations for Parallel LDO's Using Ballast PDF | HTML 2022/12/13
應用說明 Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 2022/10/19
應用說明 DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 2020/8/21
電子書 Radiation Handbook for Electronics (Rev. A) 2019/5/21

設計與開發

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開發板

TPS7H1111EVM-CVAL — 具備超高 PSRR 且適用於 1.5-A 超低雜訊 RF LDO 穩壓器的 TPS7H1111-SP 評估模組

TPS7H1111EVM-CVAL 評估模組 (EVM) 是用於耐輻射 (RHA) TPS7H1111-SP 的工程展示板,是一款低壓降 (LDO) 線性穩壓器。

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模擬型號

TPS7H1111-SP PSpice Model

SLVME08.ZIP (55 KB) - PSpice 模型
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計算工具

PARALLEL-LDO-CALC — Parallel low-dropout (LDO) calculator

並聯低壓差 (LDO) 計算器是以 Microsoft® Excel® 為基礎的工具,可為使用鎮流器電阻器的並聯 LDO 穩壓器提供最壞情況分析。此工具可幫助使用者判斷所需的並聯 LDO 穩壓器最小數量,以及適合系統要求集的最佳鎮流器電阻。

在並聯應用中使用的常用 LDO 穩壓器的產品規格書資訊會預先填入計算機中。使用者可根據自己的系統需求,評估最符合其系統需求的 LDO 穩壓器裝置。

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
HTSSOP (PWP) 28 Ultra Librarian
CFP (HBL) 14 Ultra Librarian

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