首頁 電源管理 閘極驅動器 半橋式驅動器
首頁
電源管理
閘極驅動器
半橋式驅動器

TPS7H6003-SP

現行

Radiation-hardened, QML-V, 200V half-bridge GaN gate driver

立即訂購
產品規格表

TPS7H6003-SP

現行
產品規格表 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 200 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 200 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
CFP (HBX) 48 468.72 mm² (16.74 mm × 28 mm)
  • Radiation Performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching
  • Radiation Performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching

The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating). The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x3-SP drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x3-SP drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.

The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating). The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x3-SP drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x3-SP drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.
filter 尋找其它 半橋式驅動器
下載 觀看有字幕稿的影片 影片

技術文件

找不到結果。請清除您的搜尋條件，然後再試一次。
檢視所有 18
重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers datasheet (Rev. C) PDF | HTML 2024/4/17
* 輻射及可靠性報告 TPS7H6003-SP Total Ionizing Dose (TID) Radiation Report (Rev. B) 2026/3/19
* 輻射及可靠性報告 TPS7H60X3-SP Neutron Displacement Damage (NDD) Characterization Report (Rev. A) PDF | HTML 2024/8/13
* 輻射及可靠性報告 TPS7H60X3-SP Single-Event Effects (SEE) Report (Rev. A) PDF | HTML 2024/6/17
* SMD TPS7H6003-SP SMD 5962-22201 2023/12/21
選擇指南 TI Space Products (Rev. L) 2026/3/27
應用說明 Hermetic Package Reflow Profiles, Termination Finishes, and Lead Trim and Form (Rev. A) PDF | HTML 2025/11/5
技術文章 不要採用艱難的方式進行切換；以 PWM 全橋實現 ZVS PDF | HTML Download English Version PDF | HTML 2025/8/13
設計指南 Radiation-Hardened Space Battery Management System (BMS) Reference Design PDF | HTML 2025/7/30
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML 2025/6/17
應用說明 Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML 2025/6/10
技術文章 如何為具有電子電源系統的下一代衛星最佳化 SWaP (Rev. A) PDF | HTML Download English Version (Rev.A) PDF | HTML 2025/3/20
更多文件說明 TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. B) 2025/2/20
應用說明 QML flow, its importance, and obtaining lot information (Rev. C) 2023/8/30
證書 TPS7H6003EVM-CVAL EU Declaration of Conformity (DoC) 2023/6/29
應用說明 Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 2022/10/19
應用說明 DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 2020/8/21
電子書 Radiation Handbook for Electronics (Rev. A) 2019/5/21

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

TPS7H6003EVM-CVAL — 適用於 200-V、1.5-A 和 3-A、GaN FET 半橋驅動器的 TPS7H6003 評估模組

TPS7H6003 評估模組接受高達 150-V 輸入，並允許透過驅動 EPC2307 零件測試 TPS7H6003-SP 的可靠性。依預設，評估模組設定為在 PWM 模式下搭配 TPS7H6003-SP 裝置共同執行，該模式接受一個切換訊號的輸入，並在內部產生互補訊號。

使用指南: PDF | HTML
支援產品和硬體
有庫存
限制：
??asset.out-of-stock-ti_zh_TW??
無法提供
模擬型號

TPS7H60x3-SP PSpice Transient Model

SNOM790.ZIP (46 KB) - PSpice 模型
支援產品和硬體
模擬型號

TPS7H60x3/TPS7H60x5 SIMPLIS Model

SNOM811.ZIP (22 KB) - SIMPLIS 模型
支援產品和硬體
參考設計

PMP23200 — 100W, 5V output hard-switched full-bridge converter reference design for 100kRad applications

此參考設計採用 TPS7H5001-SP 脈衝寬度調變 (PWM) 控制器和三個 TPS7H6003-SP 半橋驅動器，用以一個硬開關全橋轉換器，該轉換器的輸入範圍為 22V 至 36V，並產生一個隔離式 5V 輸出，負載功率為 100W。控制器、驅動器和功率 FET 的選擇滿足地球靜止軌道 (GEO) 級輻射性能。相較於傳統二極體整流器，次級同步整流器可提升效率並改善了熱性能。
支援產品和硬體
封裝 針腳 CAD 符號、佔位空間與 3D 模型
CFP (HBX) 48 Ultra Librarian
適用 TI 的評估品項標準條款與條件。

訂購與品質

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

以英文檢視所有論壇主題

內容係由 TI 和社群貢獻者依「現狀」提供，且不構成 TI 規範。檢視使用條款。

若有關於品質、封裝或訂購 TI 產品的問題，請參閱 TI 支援。​​​​​​​​​​​​​​

影片系列

觀看所有影片

影片