現在提供此產品的更新版本
功能相同，但針腳輸出與所比較的裝置不同。
TPSI2072-Q1
- Qualified for automotive
applications
- AEC-Q100 grade 1: –40 to 125°C T A
- Integrated avalanche rated MOSFETs
- Designed and qualified
for reliability for dielectric withstand testing (Hi-Pot)
- I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
- V HIPOT, 5-s = 4300-V with R series > 1.83-MΩ
- V HIPOT, 5-s = 2850-V with R series > 1.1-MΩ
- 600-V standoff voltage
- R ON = 65-Ω (T J = 25°C)
- I OFF = 1-µA at 500-V (T J = 105°C)
- Designed and qualified
for reliability for dielectric withstand testing (Hi-Pot)
- Low primary side supply current
- 5-mA single channel, 9-mA two channel ON state current
-
Functional Safety Capable
- Documentation available to aid in ISO 26262 and IEC 61508 system design
- Robust isolation barrier:
- > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
- Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
- SOIC 11-pin (DWQ) package with wide pins for
improved thermal performance
- Creepage and clearance ≥ 8-mm (primary-secondary)
- Creepage and clearance ≥ 3-mm (across switch terminals)
- Safety-related certifications
- (Planned) DIN VDE V 0884-11:2017-01
- (Planned) UL 1577 component recognition program
The TPSI2072-Q1 is a two channel isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2072-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2072-Q1 improves system reliability as TI’s capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.
The primary side of the device is powered by only 9 mA of input current and incorporates fail-safe EN1 and EN2 pins preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5 V–20 V and the EN1 and EN2 pins of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, the VDD, EN1, and EN2 pins could be driven together directly from the system supply or from a GPIO output.
Each channel on the secondary side consists of back-to-back MOSFETs with a standoff voltage of +/-600 V from SM to S1 and SM to S2. The TPSI2072-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | TPSI2072-Q1 2-Channel 600-V, 50-mA, Automotive Isolated Switch with 2-mA Avalanche Rating for Insulation Monitoring and High Voltage Measurements datasheet | PDF | HTML | 2023/6/30 | ||
| 應用說明 | Basics of Solid-State Relays | PDF | HTML | 2024/7/24 | |||
| 功能安全資訊 | TPSI2072-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA | 2023/6/30 | ||||
| 證書 | TPSI2072Q1EVM EU Declaration of Conformity (DoC) | 2023/6/27 | ||||
| Product overview | When to use SSR or Isolated Gate Driver | PDF | HTML | 2022/8/4 |
設計與開發
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| SOIC (DWQ) | 11 | Ultra Librarian |
訂購與品質
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