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UCC27712

現行

具有連鎖功能的 1.8A/2.8A、620V 半橋驅動器

產品詳細資料

Bootstrap supply voltage (max) (V) 700 Power switch IGBT, MOSFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 20 Peak output current (A) 2.8 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 10 Rating Catalog Propagation delay time (µs) 0.1 Rise time (ns) 16 Fall time (ns) 10 Iq (mA) 0.25 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -11 Features Dead time control, Interlock Driver configuration CMOS compatible, Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 700 Power switch IGBT, MOSFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 20 Peak output current (A) 2.8 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 10 Rating Catalog Propagation delay time (µs) 0.1 Rise time (ns) 16 Fall time (ns) 10 Iq (mA) 0.25 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -11 Features Dead time control, Interlock Driver configuration CMOS compatible, Dual, Noninverting, TTL compatible
SOIC (D) 8 29.4 mm² 4.9 x 6
  • High-side and low-side configuration
  • Dual inputs with output interlock and 150-ns deadtime
  • Fully operational up to 620-V, 700-V absolute maximum on HB pin
  • 10-V to 20-V VDD recommended range
  • Peak output current 2.8-A sink, 1.8-A source
  • dv/dt immunity of 50 V/ns
  • Logic operational up to –11 V on HS pin
  • Negative voltage tolerance on inputs of –5 V
  • Large negative transient safe operating area
  • UVLO protection for both channels
  • Small propagation delay (100-ns typical)
  • Delay matching (12-ns typical)
  • Floating channel designed for bootstrap operation
  • Low quiescent current
  • TTL and CMOS compatible inputs
  • Industry standard SOIC-8 package
  • All parameters specified over temperature range, –40 °C to +125 °C
  • High-side and low-side configuration
  • Dual inputs with output interlock and 150-ns deadtime
  • Fully operational up to 620-V, 700-V absolute maximum on HB pin
  • 10-V to 20-V VDD recommended range
  • Peak output current 2.8-A sink, 1.8-A source
  • dv/dt immunity of 50 V/ns
  • Logic operational up to –11 V on HS pin
  • Negative voltage tolerance on inputs of –5 V
  • Large negative transient safe operating area
  • UVLO protection for both channels
  • Small propagation delay (100-ns typical)
  • Delay matching (12-ns typical)
  • Floating channel designed for bootstrap operation
  • Low quiescent current
  • TTL and CMOS compatible inputs
  • Industry standard SOIC-8 package
  • All parameters specified over temperature range, –40 °C to +125 °C

The UCC27712 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712, each channel is controlled by its respective input pins, HI and LI.

The UCC27712 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712, each channel is controlled by its respective input pins, HI and LI.

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類型 標題 日期
* Data sheet UCC27712 620-V, 1.8-A, 2.8-A High-Side Low-Side Gate Driver with Interlock datasheet (Rev. B) PDF | HTML 2020年 3月 5日
Application note Selecting Gate Drivers for HVAC Systems (Rev. A) PDF | HTML 2025年 11月 7日
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024年 3月 25日
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 2024年 1月 22日
Technical article Selecting the right level of integration to meet motor design requirements PDF | HTML 2024年 1月 4日
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023年 9月 8日
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 2021年 4月 7日
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020年 5月 12日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse PDF | HTML 2018年 9月 19日
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadti PDF | HTML 2018年 5月 30日
Technical article How to achieve higher system robustness in DC drives, part 1: negative voltage PDF | HTML 2018年 4月 17日
EVM User's guide Using the UCC27712EVM-287 2017年 6月 15日

設計與開發

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開發板

UCC27712EVM-287 — 具有連鎖功能的 UCC27712 620V、1.8A、2.8A 高壓側低壓側閘極驅動器評估模組

UCC27712EVM-287 專為評估 UCC27712D 而設計,這是一款具備高源極和汲極峰值電流能力的 620V 半橋閘極驅動器。此 EVM 的目標是依照產品規格書參數評估驅動器 IC 的性能。EVM 也可當成驅動器 IC 元件選擇指南使用。EVM 還可以輕鬆配置為同步降壓轉換器等電源級拓撲,並測試佈局對性能的影響。
使用指南: PDF
TI.com 無法提供
模擬型號

UCC27712 PSpice Transient Model

SLUM579.ZIP (68 KB) - PSpice Model
模擬型號

UCC27712 TINA-TI Transient Reference Design

SLUM599.TSC (1513 KB) - TINA-TI Reference Design
模擬型號

UCC27712 TINA-TI Transient Spice Model

SLUM600.ZIP (23 KB) - TINA-TI Spice Model
模擬型號

UCC27712 Unencrypted PSpice Transient Model

SLUM637.ZIP (3 KB) - PSpice Model
配置圖

UCC2771x Schematic Review Template

SLURB13.ZIP (63 KB)
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI 是有助於評估類比電路功能的設計和模擬環境。這款全功能設計和模擬套件使用 Cadence® 的類比分析引擎。PSpice for TI 包括業界最大的模型庫之一,涵蓋我們的類比和電源產品組合,以及特定類比行為模型,且使用無需支付費用。

PSpice for TI 設計和模擬環境可讓您使用其內建函式庫來模擬複雜的混合訊號設計。在進行佈局和製造之前,建立完整的終端設備設計和解決方案原型,進而縮短上市時間並降低開發成本。 

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