SWRS201C January   2017  – March 2025 CC2640R2F-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
    1. 5.1 Related Products
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagram—RGZ Package
    2. 6.2 Signal Descriptions—RGZ Package
    3. 6.3 Wettable Flanks
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Power Consumption Summary
    5. 7.5  General Characteristics
    6. 7.6  1Mbps GFSK (Bluetooth Low Energy Technology)—RX
    7. 7.7  1Mbps GFSK (Bluetooth Low Energy Technology)—TX
    8. 7.8  24MHz Crystal Oscillator (XOSC_HF)
    9. 7.9  32.768kHz Crystal Oscillator (XOSC_LF)
    10. 7.10 48MHz RC Oscillator (RCOSC_HF)
    11. 7.11 32kHz RC Oscillator (RCOSC_LF)
    12. 7.12 ADC Characteristics
    13. 7.13 Temperature Sensor
    14. 7.14 Battery Monitor
    15. 7.15 Continuous Time Comparator
    16. 7.16 Low-Power Clocked Comparator
    17. 7.17 Programmable Current Source
    18. 7.18 Synchronous Serial Interface (SSI)
    19. 7.19 DC Characteristics
    20. 7.20 Thermal Resistance Characteristics for RGZ Package
    21. 7.21 Timing Requirements
    22. 7.22 Switching Characteristics
    23. 7.23 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1  Overview
    2. 8.2  Main CPU
    3. 8.3  RF Core
    4. 8.4  Sensor Controller
    5. 8.5  Memory
    6. 8.6  Debug
    7. 8.7  Power Management
    8. 8.8  Clock Systems
    9. 8.9  General Peripherals and Modules
    10. 8.10 System Architecture
  10. 9 Application, Implementation, and Layout
    1. 9.1 Application Information
    2. 9.2 7 × 7 Internal Differential (7ID) Application Circuit
      1. 9.2.1 Layout
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Tools and Software
    3. 10.3 Documentation Support
    4. 10.4 Texas Instruments Low-Power RF Website
    5. 10.5 Support Resources
    6. 10.6 Trademarks
    7. 10.7 Electrostatic Discharge Caution
    8. 10.8 Export Control Notice
    9. 10.9 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGZ|48
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.5 General Characteristics

Tc = 25°C, VDDS = 3.0V, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
FLASH MEMORY
Supported flash erase cycles before failure100k Cycles
Maximum number of write operations per row before erase(1)83write operations
Flash retention105°C11.4Years at 105°C
Flash page/sector erase currentAverage delta current12.6mA
Flash page/sector size4KB
Flash page/sector erase time(2)Zero cycles8ms
Flash page/sector erase time (2)30 000 cycles4000ms
Flash write currentAverage delta current, 4 bytes at a time8.15mA
Flash write time4 bytes at a time8µs
(1) Each row is 2048 bits (or 256 bytes) wide.
(2) This number is dependent on Flash aging and will increase over time and erase cycles.