SNOS641I October   1999  – July 2025 LM4041-N , LM4041-N-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
    1.     Pin Functions
    2.     Pin Functions: ADJ Pinouts
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  LM4041-N LM4041-N-Q1 1.2 Electrical Characteristics (Industrial Temperature Range)
    6. 5.6  LM4041-N LM4041-N-Q1 1.2 Electrical Characteristics (Industrial Temperature Range)
    7. 5.7  LM4041-N LM4041-N-Q1 1.2 Electrical Characteristics (Extended Temperature Range)
    8. 5.8  LM4041-N LM4041-N-Q1 ADJ (Adjustable) Electrical Characteristics (Industrial Temperature Range)
    9. 5.9  LM4041-N LM4041-N-Q1 ADJ (Adjustable) Electrical Characteristics (Extended Temperature Range)
    10. 5.10 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Shunt Regulator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Adjustable Shunt Regulator
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detail Design Procedure
      3. 8.2.3 Bounded Amplifier
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detail Design Procedure
        3. 8.2.3.3 Application Curve
      4. 8.2.4 Voltage Level Detector
        1. 8.2.4.1 Design Procedure
        2. 8.2.4.2 Detail Design Procedure
      5. 8.2.5 Precision Current Sink and Source
        1. 8.2.5.1 Design Requirements
        2. 8.2.5.2 Detailed Design Procedure
      6. 8.2.6 100mA Current Source
        1. 8.2.6.1 Design Requirements
        2. 8.2.6.2 Detailed Design Procedure
      7. 8.2.7 LM4041 in Clamp Circuits
        1. 8.2.7.1 Design Requirements
        2. 8.2.7.2 Detailed Design Procedure
      8. 8.2.8 Floating Current Detector
        1. 8.2.8.1 Design Requirement
        2. 8.2.8.2 Detailed Design Procedure
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.5 LM4041-NLM4041-N-Q1 1.2 Electrical Characteristics (Industrial Temperature Range)

All limits TA = TJ = 25°C for the LM4041AIM3, LM4041BIM3, LM4041AIZ, LM4041BIZ and LM4041BIM7LM4041QAIM3 and LM4041QBIM3 devices, unless otherwise specified. The grades A and B designate initial reverse breakdown voltage tolerances of ±0.1% and ±0.2%, respectively.
PARAMETERTEST CONDITIONSMIN(1)TYP(2)MAX(1)UNIT
VRReverse breakdown voltageIR = 100μA1.225V
Reverse breakdown voltage tolerance(3)IR = 100μALM4041AIM3LM4041QAIM3
LM4041AIM3, LM4041AIZ		±1.2mV
LM4041BIM3 LM4041QBIM3
LM4041BIZ, LM4041BIM7		±2.4
TA = TJ = TMIN to TMAXLM4041AIM3LM4041QAIM3
LM4041AIM3, LM4041AIZ		±9.2
LM4041BIM3 LM4041QBIM3
LM4041BIZ, LM4041BIM7		±10.4
IRMINMinimum operating currentTA = TJ = 25°C4560μA
TA = TJ = TMIN to TMAX65
ΔVR/ΔTAverage reverse breakdown
voltage temperature
Coefficient(3)		IR= 10mA±20ppm/°C
IR = 1mATA = TJ = 25°C±15
TA = TJ = TMIN to TMAX±100
IR = 100μA±15
ΔVR/ΔIRReverse breakdown voltage change with operating
current change(4)		IRMIN ≤ IR ≤ 1mATA = TJ = 25°C0.71.5mV
TA = TJ = TMIN to TMAX2
1mA ≤ IR ≤ 12mATA = TJ = 25°C46
TA = TJ = TMIN to TMAX8
ZRReverse dynamic impedanceIR = 1mA, f = 120Hz,
IAC= 0.1 IR		0.51.5Ω
eNWide band noiseIR = 100μA
10Hz ≤ f ≤ 10kHz		20μVRMS
ΔVRReverse breakdown voltage long-term stabilityt = 1000 hrs
T = 25°C ±0.1°C
IR = 100μA		120ppm
VHYSTThermal hysteresis(5)ΔT = −40°C to +125°C0.08%
(1) Limits are 100% production tested at 25°C. Limits over temperature are made sure through correlation using Statistical Quality Control (SQC) methods. The limits are used to calculate AOQL.
(2) Typical values are at TJ = 25°C and represent most likely parametric norm.
(3) The over temperature limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage Tolerance ±[(ΔVR↱ΔT)(max ΔT)(VR)]. Where, ΔVR/ΔT is the VR temperature coefficient, max ΔT is the maximum difference in temperature from the reference point of 25 °C to TMAX or TMIN, and VR is the reverse breakdown voltage. The total over-temperature tolerance for the different grades in the industrial temperature range where max ΔT = 65°C is shown below:
A-grade: ±0.75% = ±0.1% ±100ppm/°C × 65°C
B-grade: ±0.85% = ±0.2% ±100ppm/°C × 65°C
C-grade: ±1.15% = ±0.5% ±100ppm/°C × 65°C
D-grade: ±1.98% = ±1.0% ±150ppm/°C × 65°C
E-grade: ±2.98% = ±2.0% ±150ppm/°C × 65°C
The total over-temperature tolerance for the different grades in the extended temperature range where max ΔT = 100°C is shown below:
B-grade: ±1.2% = ±0.2% ±100ppm/°C × 100°C
C-grade: ±1.5% = ±0.5% ±100ppm/°C × 100°C
D-grade: ±2.5% = ±1.0% ±150ppm/°C × 100°C
E-grade: ±4.5% = ±2.0% ±150ppm/°C × 100°C
Therefore, as an example, the A-grade LM4041-NLM4041-N-Q1 1.2 has an over-temperature Reverse Breakdown Voltage tolerance of ±1.2 V × 0.75% = ±9.2mV.
(4) Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change must be taken into account separately.
(5) Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature –40°C and the +25°C measurement after cycling to temperature +125°C.