SLASFC6A August   2024  – August 2025 TAS2120

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Device Functional Modes
      1. 6.3.1 Operational Modes
        1. 6.3.1.1 Hardware Shutdown
        2. 6.3.1.2 Hardware Config Modes
        3. 6.3.1.3 Software Power Modes Control and Software Reset
        4. 6.3.1.4 Efficiency and power saving modes
          1. 6.3.1.4.1 Noise Gate
          2. 6.3.1.4.2 Music Efficiency Mode
          3. 6.3.1.4.3 VDD Y-bridge
          4. 6.3.1.4.4 Class-H Boost
        5. 6.3.1.5 2S Battery Mode
        6. 6.3.1.6 External PVDD Mode
      2. 6.3.2 Faults and Status
        1. 6.3.2.1 Interrupt generation and clearing
    4. 6.4 Feature Description
      1. 6.4.1  PurePath™ Console 3 Software
      2. 6.4.2  Playback Signal Path
        1. 6.4.2.1 Digital Volume Control and Amplifier Output Level
        2. 6.4.2.2 High Pass Filter
        3. 6.4.2.3 Class-D Amplifier
        4. 6.4.2.4 Supply Tracking Limiters with Brown Out Prevention
          1. 6.4.2.4.1 Voltage Limiter and Clipping protection
        5. 6.4.2.5 Tone Generator
      3. 6.4.3  Digital Audio Serial Interface
        1. 6.4.3.1 Digital Loopback
      4. 6.4.4  Internal Boost
      5. 6.4.5  Boost Share
      6. 6.4.6  External Class-H Boost Controller
      7. 6.4.7  Supply Voltage Monitors
      8. 6.4.8  Thermal Protection
      9. 6.4.9  Clocks and PLL
        1. 6.4.9.1 Auto clock based wakeup and clock errors
      10. 6.4.10 Digital IO pins
    5. 6.5 Programming
      1. 6.5.1 I2C Control Interface
      2. 6.5.2 I2C Address Selection
      3. 6.5.3 General I2C Operation
      4. 6.5.4 I2C Single-Byte and Multiple-Byte Transfers
      5. 6.5.5 I2C Single-Byte Write
      6. 6.5.6 I2C Multiple-Byte Write
      7. 6.5.7 I2C Single-Byte Read
      8. 6.5.8 I2C Multiple-Byte Read
  8. Register Maps
    1. 7.1  PAGE 0 Registers
    2. 7.2  PAGE 1 Registers
    3. 7.3  PAGE 2 Registers
    4. 7.4  PAGE 3 Registers
    5. 7.5  PAGE 4 Registers
    6. 7.6  PAGE 5 Registers
    7. 7.7  PAGE 6 Registers
    8. 7.8  PAGE 7 Registers
    9. 7.9  PAGE 8 Registers
    10. 7.10 BOOK100 PAGE9 Registers
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Mono/Stereo Configuration
        2. 8.2.2.2 Boost Converter Passive Devices
        3. 8.2.2.3 EMI Passive Devices
        4. 8.2.2.4 Miscellaneous Passive Devices
      3. 8.2.3 Application Performance Plots
    3. 8.3 What to Do and What Not to Do
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Miscellaneous Passive Devices

The GREG Capacitor requires 100 nF to meet Class-D power delivery and efficiency specs. For device functionality, the GREG capacitor should be kelvin/star connected to PVDD pin of the device.

In order to maintain the device performance and keep the supply ripple within the device specification, minimizing the parasitic inductance on supply/ground paths for decoupling capacitors is required. All supply decapacitors should be selected as smallest package footprint to minimize the ESL of the capacitors. The layout placement and routing of the capacitors is critical for minimizing the trace parasitic inductance. Refer to Layout section (Section 8.5.1) to get detailed recommendations.