SLASFC6A August   2024  – August 2025 TAS2120

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Device Functional Modes
      1. 6.3.1 Operational Modes
        1. 6.3.1.1 Hardware Shutdown
        2. 6.3.1.2 Hardware Config Modes
        3. 6.3.1.3 Software Power Modes Control and Software Reset
        4. 6.3.1.4 Efficiency and power saving modes
          1. 6.3.1.4.1 Noise Gate
          2. 6.3.1.4.2 Music Efficiency Mode
          3. 6.3.1.4.3 VDD Y-bridge
          4. 6.3.1.4.4 Class-H Boost
        5. 6.3.1.5 2S Battery Mode
        6. 6.3.1.6 External PVDD Mode
      2. 6.3.2 Faults and Status
        1. 6.3.2.1 Interrupt generation and clearing
    4. 6.4 Feature Description
      1. 6.4.1  PurePath™ Console 3 Software
      2. 6.4.2  Playback Signal Path
        1. 6.4.2.1 Digital Volume Control and Amplifier Output Level
        2. 6.4.2.2 High Pass Filter
        3. 6.4.2.3 Class-D Amplifier
        4. 6.4.2.4 Supply Tracking Limiters with Brown Out Prevention
          1. 6.4.2.4.1 Voltage Limiter and Clipping protection
        5. 6.4.2.5 Tone Generator
      3. 6.4.3  Digital Audio Serial Interface
        1. 6.4.3.1 Digital Loopback
      4. 6.4.4  Internal Boost
      5. 6.4.5  Boost Share
      6. 6.4.6  External Class-H Boost Controller
      7. 6.4.7  Supply Voltage Monitors
      8. 6.4.8  Thermal Protection
      9. 6.4.9  Clocks and PLL
        1. 6.4.9.1 Auto clock based wakeup and clock errors
      10. 6.4.10 Digital IO pins
    5. 6.5 Programming
      1. 6.5.1 I2C Control Interface
      2. 6.5.2 I2C Address Selection
      3. 6.5.3 General I2C Operation
      4. 6.5.4 I2C Single-Byte and Multiple-Byte Transfers
      5. 6.5.5 I2C Single-Byte Write
      6. 6.5.6 I2C Multiple-Byte Write
      7. 6.5.7 I2C Single-Byte Read
      8. 6.5.8 I2C Multiple-Byte Read
  8. 7 Register Maps
    1. 7.1  PAGE 0 Registers
    2. 7.2  PAGE 1 Registers
    3. 7.3  PAGE 2 Registers
    4. 7.4  PAGE 3 Registers
    5. 7.5  PAGE 4 Registers
    6. 7.6  PAGE 5 Registers
    7. 7.7  PAGE 6 Registers
    8. 7.8  PAGE 7 Registers
    9. 7.9  PAGE 8 Registers
    10. 7.10 BOOK100 PAGE9 Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Mono/Stereo Configuration
        2. 8.2.2.2 Boost Converter Passive Devices
        3. 8.2.2.3 EMI Passive Devices
        4. 8.2.2.4 Miscellaneous Passive Devices
      3. 8.2.3 Application Performance Plots
    3. 8.3 What to Do and What Not to Do
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VBAT Battery Supply 2.5 3.6 5.5 V
VBAT Battery Supply (2S Mode of operation) 3 3.6 5.5 V
VBAT_SNS Battery Sense pin voltage 2.5 10 V
VBAT2S 2S Battery Voltage (connected to SW pin through inductor in 2S Mode of operation) 4.7 7.2 10 V
VPVDD Amplifier Supply VBAT 12 15 V
VVDD Supply Voltage 1.65 1.8 1.95 V
VIOVDD IO Supply Voltage 1.8V 1.62 1.8 1.98 V
VIOVDD IO Supply Voltage 3.3V 3.0 3.3 3.6 V
RSPK Speaker resistance 3.2 8 38.4 Ω
LSPK Speaker inductance 5 33 100 µH
TA Ambient temperature –40 85 °C
TJ Junction temperature –40 150 °C