SNOSDM1 December   2025 TLV6722

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Separate Power Supplies (H_VCC, M_VCC)
      2. 8.4.2 Low Supply Reset Deassertion
      3. 8.4.3 Power-On Reset (POR)
      4. 8.4.4 Inputs (INT/RSTn, LPWn/PRSn(/ePPS), M_INT)
      5. 8.4.5 Outputs (M_RSTn, M_LPWn, M_CLK)
      6. 8.4.6 Switching Thresholds and Hysteresis
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Host supply voltage (H_VCC) from (GND) –0.3 4 V
Module supply voltage (M_VCC) from (GND) –0.3 4 V
Input pins (INT/RSTn, LPWn/PRSn(/ePPS)) from (GND) (2) –0.3 4 V
Input pin (M_INT) from (GND) (3) –0.3 M_VCC + 0.3 V
Output (M_RSTn) voltage (Open-drain) from (GND) –0.3 4 V
Output (M_LPWn, M_CLK) voltage (Push-pull) from (GND) –0.3 M_VCC + 0.3 V
Output short-circuit duration (4) 10 s
Junction temperature, TJ 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) INT/RSTn and LPWn/PRSn(/ePPS) input terminals are diode-clamped to (GND). Input signals that can swing more than 0.3V below (GND) must be current-limited to 10mA or less. Additionally, inputs can be greater than H_VCC and M_VCC as long as it is within the –0.3V to 4V range
(3) M_INT input terminal is diode-clamped to (M_VCC) and (GND). Input signals that can swing more than 0.3V below (GND) and 0.3V above (M_VCC) must be current-limited to 10mA or less.
(4) M_RSTn short circuit to M_VCC. M_LPWn short circuit to M_VCC or GND. Short circuits from outputs can cause excessive heating and eventual destruction.