SNVSCO1 November   2025 LM5126A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Device Configuration (CFG0-pin, CFG1-pin, CFG2-pin )
      2. 6.3.2  Device Enable/Disable (UVLO/EN)
      3. 6.3.3  Dual Device Operation
      4. 6.3.4  Switching Frequency and Synchronization (SYNCIN)
      5. 6.3.5  Dual Random Spread Spectrum (DRSS)
      6. 6.3.6  Operation Modes (BYPASS, DEM, FPWM)
      7. 6.3.7  VCC Regulator, BIAS (BIAS-pin, VCC-pin)
      8. 6.3.8  Soft Start (SS-pin)
      9. 6.3.9  VOUT Programming (VOUT, ATRK, DTRK)
      10. 6.3.10 Protections
        1. 6.3.10.1 VOUT Overvoltage Protection (OVP)
        2. 6.3.10.2 Thermal Shutdown (TSD)
      11. 6.3.11 Power-Good Indicator (PGOOD-pin)
      12. 6.3.12 Slope Compensation (CSP, CSN)
      13. 6.3.13 Current Sense Setting and Switch Peak Current Limit (CSP, CSN)
      14. 6.3.14 Input Current Limit and Monitoring (ILIM, IMON, DLY)
      15. 6.3.15 Maximum Duty Cycle and Minimum Controllable On-time Limits
      16. 6.3.16 Signal Deglitch Overview
      17. 6.3.17 MOSFET Drivers, Integrated Boot Diode, and Hiccup Mode Fault Protection (LO, HO, HB-pin)
    4. 6.4 Device Functional Modes
      1. 6.4.1 Shutdown State
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Feedback Compensation
      2. 7.1.2 3 Phase Operation
      3. 7.1.3 Non-synchronous Application
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1  Determine the Total Phase Number
        2. 7.2.2.2  Determining the Duty Cycle
        3. 7.2.2.3  Timing Resistor RT
        4. 7.2.2.4  Inductor Selection Lm
        5. 7.2.2.5  Current Sense Resistor Rcs
        6. 7.2.2.6  Current Sense Filter RCSFP, RCSFN, CCS
        7. 7.2.2.7  Low-Side Power Switch QL
        8. 7.2.2.8  High-Side Power Switch QH
        9. 7.2.2.9  Snubber Components
        10. 7.2.2.10 Vout Programming
        11. 7.2.2.11 Input Current Limit (ILIM/IMON)
        12. 7.2.2.12 UVLO Divider
        13. 7.2.2.13 Soft Start
        14. 7.2.2.14 CFG Settings
        15. 7.2.2.15 Output Capacitor Cout
        16. 7.2.2.16 Input Capacitor Cin
        17. 7.2.2.17 Bootstrap Capacitor
        18. 7.2.2.18 VCC Capacitor CVCC
        19. 7.2.2.19 BIAS Capacitor
        20. 7.2.2.20 VOUT Capacitor
        21. 7.2.2.21 Loop Compensation
      3. 7.2.3 Application Curves
        1. 7.2.3.1 Efficiency
        2. 7.2.3.2 Steady State Waveforms
        3. 7.2.3.3 Step Load Response
        4. 7.2.3.4 AC Loop Response Curve
        5. 7.2.3.5 Thermal Performance
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

6.1 Overview

The LM5126A-Q1 is a wide input range boost controller. The device provides a regulated output voltage if the input voltage is equal or lower than the adjusted output voltage. The resistor-to-digital (R2D) interface offers the user a simple and robust selection of the device functionality.

The operation modes DEM (Diode Emulation Mode) and FPWM (Forced Pulse Width Modulation) are on-the-fly pin-selectable during operation. The peak current mode control operates with fixed switching frequency set by the RT-pin. Through the activation of the dual random spread spectrum operation, EMI mitigation is achievable at any time of the design process.

The integrated average current monitor helps to monitor or limit the input current. The output voltage can be dynamically adjusted during operation (dynamic voltage scaling and envelope tracking). Adjusting VOUT is possible by changing the analog reference voltage of the ATRK/DTRK-pin or with a PWM input signal on the ATRK/DTRK pin.

The internal wide input LDOs provide a robust supply of the device functionality under different input and output voltage conditions. Due to the high drive capability and the automatic and headroom depended voltage selection (VBIAS or VOUT), the power losses are kept at a minimum. Connect the separate BIAS-pin to VI, VOUT or an external supply to further reduce power losses in the device. At all times, the internal supply voltage is monitored to avoid undefined failure handling.

The device integrates a half bridge N-channel MOSFET driver. The gate driver circuit has a high driving capability to drive a wide range of MOSFETs. The gate driver features an integrated high voltage low dropout bootstrap diode. The internal bootstrap circuit has a protection against an overvoltage that is injected by negative spikes and an undervoltage lockout protection to avoid a linear operation of the external power FET. An integrated charge pump enables 100% duty cycle operation in BYPASS mode.

The built-in protection features provide a safe operation under different fault conditions. There is a VI undervoltage lockout protection to avoid brownout situations. Brownout is avoided under different designs because the input UVLO threshold and hysteresis is configured through an external feedback divider. The device also incorporates an output overvoltage protection. The selectable hiccup overcurrent protection avoids excessive short circuit currents by using the internal cycle-by-cycle peak current protection. Due to the integrated thermal shutdown, the device is protected against thermal damage caused by an overload condition of the internal VCC regulators. All output-related fault events are monitored and indicated at the open-drain PGOOD-pin.